Details
| Original language | English |
|---|---|
| Pages (from-to) | 1678-1687 |
| Number of pages | 10 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 11 |
| Publication status | Published - 1996 |
| Externally published | Yes |
Abstract
We investigated in detail the strain relaxation behaviour of metastable tensile-strained Si1-yCy epilayers on Si(001) by comparing the layers before and after an annealing step using a variety of different diagnostic methods. The dominant strain-relieving mechanism is the formation of carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to the behaviour of carbon in silicon under thermodynamical equilibrium conditions (concentrations below the solid bulk solubility limit). We did not observe any carbon out-diffusion. To grow material suitable for device applications, all carbon atoms should be incorporated substitutionally. There is only a very narrow temperature window for perfect epitaxial growth of such layers, limited on one side by the possible formation of interstitial carbon complexes and on the other side by the deterioration of epitaxial growth at low temperatures. The carbon concentration should not exceed a few per cent to avoid strain-driven precipitation.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 11, No. 11, 1996, p. 1678-1687.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Strain relaxation in tensile-strained Si1-yCy layers on Si(001)
AU - Osten, H. J.
AU - Endisch, D.
AU - Bugiel, E.
AU - Dietrich, B.
AU - Fischer, G. G.
AU - Kim, Myeongcheol
AU - Krüger, D.
AU - Zaumseil, P.
PY - 1996
Y1 - 1996
N2 - We investigated in detail the strain relaxation behaviour of metastable tensile-strained Si1-yCy epilayers on Si(001) by comparing the layers before and after an annealing step using a variety of different diagnostic methods. The dominant strain-relieving mechanism is the formation of carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to the behaviour of carbon in silicon under thermodynamical equilibrium conditions (concentrations below the solid bulk solubility limit). We did not observe any carbon out-diffusion. To grow material suitable for device applications, all carbon atoms should be incorporated substitutionally. There is only a very narrow temperature window for perfect epitaxial growth of such layers, limited on one side by the possible formation of interstitial carbon complexes and on the other side by the deterioration of epitaxial growth at low temperatures. The carbon concentration should not exceed a few per cent to avoid strain-driven precipitation.
AB - We investigated in detail the strain relaxation behaviour of metastable tensile-strained Si1-yCy epilayers on Si(001) by comparing the layers before and after an annealing step using a variety of different diagnostic methods. The dominant strain-relieving mechanism is the formation of carbon-containing interstitial complexes and/or silicon carbide nanoparticles, similar to the behaviour of carbon in silicon under thermodynamical equilibrium conditions (concentrations below the solid bulk solubility limit). We did not observe any carbon out-diffusion. To grow material suitable for device applications, all carbon atoms should be incorporated substitutionally. There is only a very narrow temperature window for perfect epitaxial growth of such layers, limited on one side by the possible formation of interstitial carbon complexes and on the other side by the deterioration of epitaxial growth at low temperatures. The carbon concentration should not exceed a few per cent to avoid strain-driven precipitation.
UR - http://www.scopus.com/inward/record.url?scp=0030287829&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/11/007
DO - 10.1088/0268-1242/11/11/007
M3 - Article
AN - SCOPUS:0030287829
VL - 11
SP - 1678
EP - 1687
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
ER -