Details
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 23 |
| Publication status | Published - 2002 |
Abstract
Using spot profile analysis in low-energy electron diffraction, we have investigated vicinal Ge(100) surfaces, which were miscut by (formula presented) and (formula presented) respectively, in [011] direction with respect to the surface normal. Within the kinematic approximation the morphology was evaluated quantitatively both perpendicular and parallel to the step edge direction. In contrast to vicinal Si(100) surfaces with similar miscut angles, the Ge(100) surfaces still show an alternating configuration of (2×1) and (1×2) reconstructed (100) terraces, which are separated by steps of single atomic height. From the spot profiles and their energy dependence we extracted the morphological parameters such as the average terrace width, the variance of the terrace size distribution, and the average kink separation. Furthermore, step energies on the vicinal Ge(100) surfaces were estimated. These turn out to be significantly lower than for Si(100) and lead to the formation of the observed double domain structure.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 23, 2002, p. 1-8.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction
AU - Tegenkamp, Christoph
AU - Wollschläger, J.
AU - Pfnür, Herbert
AU - Meyer zu Heringdorf, F. J.
AU - Horn-von Hoegen, M.
PY - 2002
Y1 - 2002
N2 - Using spot profile analysis in low-energy electron diffraction, we have investigated vicinal Ge(100) surfaces, which were miscut by (formula presented) and (formula presented) respectively, in [011] direction with respect to the surface normal. Within the kinematic approximation the morphology was evaluated quantitatively both perpendicular and parallel to the step edge direction. In contrast to vicinal Si(100) surfaces with similar miscut angles, the Ge(100) surfaces still show an alternating configuration of (2×1) and (1×2) reconstructed (100) terraces, which are separated by steps of single atomic height. From the spot profiles and their energy dependence we extracted the morphological parameters such as the average terrace width, the variance of the terrace size distribution, and the average kink separation. Furthermore, step energies on the vicinal Ge(100) surfaces were estimated. These turn out to be significantly lower than for Si(100) and lead to the formation of the observed double domain structure.
AB - Using spot profile analysis in low-energy electron diffraction, we have investigated vicinal Ge(100) surfaces, which were miscut by (formula presented) and (formula presented) respectively, in [011] direction with respect to the surface normal. Within the kinematic approximation the morphology was evaluated quantitatively both perpendicular and parallel to the step edge direction. In contrast to vicinal Si(100) surfaces with similar miscut angles, the Ge(100) surfaces still show an alternating configuration of (2×1) and (1×2) reconstructed (100) terraces, which are separated by steps of single atomic height. From the spot profiles and their energy dependence we extracted the morphological parameters such as the average terrace width, the variance of the terrace size distribution, and the average kink separation. Furthermore, step energies on the vicinal Ge(100) surfaces were estimated. These turn out to be significantly lower than for Si(100) and lead to the formation of the observed double domain structure.
UR - http://www.scopus.com/inward/record.url?scp=85038299618&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.65.235316
DO - 10.1103/PhysRevB.65.235316
M3 - Article
AN - SCOPUS:85038299618
VL - 65
SP - 1
EP - 8
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 23
ER -