Details
| Original language | English |
|---|---|
| Article number | 094506 |
| Journal | Journal of applied physics |
| Volume | 103 |
| Issue number | 9 |
| Early online date | 6 May 2008 |
| Publication status | Published - 2008 |
| Externally published | Yes |
Abstract
The effective surface recombination velocity of amorphous-silicon-coated crystalline silicon wafers is measured after illumination for various durations to investigate the stability of the surface passivation. We develop a defect model to determine the densities of dangling bond states at the a-Si:H/c-Si interface from fitting the experimental lifetime data. The surface recombination velocity of both p -type and n -type substrates is Seff =3±1 cm/s at τn= 1015 cm-3 in the as-deposited state. Illumination induces an increase to Seff =16±5 cm/s due to an increase in the dangling bond density by one order of magnitude. This increase is reversible by annealing at 300 °C for 5 min.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 103, No. 9, 094506, 2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Staebler-Wronski-like formation of defects at the amorphous-silicon- crystalline silicon interface during illumination
AU - Plagwitz, Heiko
AU - Terheiden, Barbara
AU - Brendel, Rolf
N1 - Funding Information: The authors thank L. Korte (HMI-Berlin, Germany) for performing photoelectron spectroscopy measurements, and R. Stangl and M. Kriegel (also from HMI) for implementing QSSPC simulation in AFORS-HET . The ISFH is a member of the German Forschungsverbund Sonnenenergie.
PY - 2008
Y1 - 2008
N2 - The effective surface recombination velocity of amorphous-silicon-coated crystalline silicon wafers is measured after illumination for various durations to investigate the stability of the surface passivation. We develop a defect model to determine the densities of dangling bond states at the a-Si:H/c-Si interface from fitting the experimental lifetime data. The surface recombination velocity of both p -type and n -type substrates is Seff =3±1 cm/s at τn= 1015 cm-3 in the as-deposited state. Illumination induces an increase to Seff =16±5 cm/s due to an increase in the dangling bond density by one order of magnitude. This increase is reversible by annealing at 300 °C for 5 min.
AB - The effective surface recombination velocity of amorphous-silicon-coated crystalline silicon wafers is measured after illumination for various durations to investigate the stability of the surface passivation. We develop a defect model to determine the densities of dangling bond states at the a-Si:H/c-Si interface from fitting the experimental lifetime data. The surface recombination velocity of both p -type and n -type substrates is Seff =3±1 cm/s at τn= 1015 cm-3 in the as-deposited state. Illumination induces an increase to Seff =16±5 cm/s due to an increase in the dangling bond density by one order of magnitude. This increase is reversible by annealing at 300 °C for 5 min.
UR - http://www.scopus.com/inward/record.url?scp=44049104372&partnerID=8YFLogxK
U2 - 10.1063/1.2913320
DO - 10.1063/1.2913320
M3 - Article
AN - SCOPUS:44049104372
VL - 103
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 9
M1 - 094506
ER -