Details
| Original language | English |
|---|---|
| Article number | 035010 |
| Journal | Semiconductor Science and Technology |
| Volume | 23 |
| Issue number | 3 |
| Publication status | Published - Mar 2008 |
Abstract
We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 23, No. 3, 035010, 03.2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing
AU - Czernohorsky, M.
AU - Tetzlaff, D.
AU - Bugiel, E.
AU - Dargis, R.
AU - Osten, H. J.
AU - Gottlob, H. D.B.
AU - Schmidt, M.
AU - Lemme, M. C.
AU - Kurz, H.
N1 - Acknowledgment: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the MegaEpos project (13N9258).
PY - 2008/3
Y1 - 2008/3
N2 - We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.
AB - We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.
UR - http://www.scopus.com/inward/record.url?scp=42549172002&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/3/035010
DO - 10.1088/0268-1242/23/3/035010
M3 - Article
AN - SCOPUS:42549172002
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
M1 - 035010
ER -