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| Original language | English |
|---|---|
| Patent number | CN1717747 |
| IPC | H01L 27/ 11 A I |
| Priority date | 26 Nov 2002 |
| Publication status | Published - 4 Jan 2006 |
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SRAM memory cell and method for compensating a leakage current for it. / Martelloni, Yannick (Inventor); Nirschl, Thomas (Inventor); Wicht, Bernhard (Inventor).
Patent No.: CN1717747. Jan 04, 2006.
Patent No.: CN1717747. Jan 04, 2006.
Research output: Patent
Martelloni, Y, Nirschl, T & Wicht, B Jan. 04 2006, SRAM memory cell and method for compensating a leakage current for it, Patent No. CN1717747.
Martelloni, Y., Nirschl, T., & Wicht, B. (2006). SRAM memory cell and method for compensating a leakage current for it. (Patent No. CN1717747).
Martelloni Y, Nirschl T, Wicht B, inventors. SRAM memory cell and method for compensating a leakage current for it. CN1717747. 2006 Jan 4.
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T1 - SRAM memory cell and method for compensating a leakage current for it
AU - Martelloni, Yannick
AU - Nirschl, Thomas
AU - Wicht, Bernhard
PY - 2006/1/4
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