Details
| Original language | English |
|---|---|
| Article number | 2200409 |
| Number of pages | 6 |
| Journal | Solar RRL |
| Volume | 6 |
| Issue number | 9 |
| Early online date | 16 Jun 2022 |
| Publication status | Published - 9 Sept 2022 |
Abstract
The impact of the phosphorus doping density in direct current-sputtered polysilicon layers on surface passivation and contact resistance by fabricating polysilicon on oxide (POLO) contacts is studied, when applying doping densities ranging from 3 × 1019 to 4 × 1020 cm−3. Hydrogenation is performed either via a hydrogen-releasing AlOx layer and postdeposition anneals in forming gas using a tube furnace at 400 °C, or by rapid firing of an AlOx/SiNy stack in a conveyor belt furnace at 810 °C. The study shows that the forming gas anneal of the weakly in situ phosphorus-doped poly-Si layers with AlOx enables a passivation quality with an implied open-circuit voltage of up to 734 mV and a recombination current density down to 1.8 fA cm−2. For fast firing, a high phosphorus concentration of 4 × 1020 cm−3 is required for comparably high passivation quality with a recombination current density down to 1.3 fA cm−2. A p-type POLO back-junction solar cell featuring such ex situ doped sputtered POLO contacts with a cell efficiency of 22.4% and an open-circuit voltage of 714 mV is fabricated. To our knowledge, this is the highest open-circuit voltage published so far with sputtered POLO contacts.
Keywords
- passivating contacts, polysilicon, screen printing, sputtering
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 6, No. 9, 2200409, 09.09.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Sputtered Phosphorus-Doped poly-Si on Oxide Contacts for Screen-Printed Si Solar Cells
AU - Nasebandt, Lasse
AU - Min, Byungsul
AU - Hollemann, Christina
AU - Hübner, Simon
AU - Dippell, Torsten
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: The authors thank M. Pollmann and B. Gehring for sample processing; T. Friedrich for TLM measurement; B. Gehring for SEM measurements; and T. Brendemühl and N. Wehmeier for supporting screen printing. This work was financially supported by the Federal Ministry for Economic Affairs and Climate Action under contract number 03EE1012A (NanoPERC) and the state of Lower Saxony.
PY - 2022/9/9
Y1 - 2022/9/9
N2 - The impact of the phosphorus doping density in direct current-sputtered polysilicon layers on surface passivation and contact resistance by fabricating polysilicon on oxide (POLO) contacts is studied, when applying doping densities ranging from 3 × 1019 to 4 × 1020 cm−3. Hydrogenation is performed either via a hydrogen-releasing AlOx layer and postdeposition anneals in forming gas using a tube furnace at 400 °C, or by rapid firing of an AlOx/SiNy stack in a conveyor belt furnace at 810 °C. The study shows that the forming gas anneal of the weakly in situ phosphorus-doped poly-Si layers with AlOx enables a passivation quality with an implied open-circuit voltage of up to 734 mV and a recombination current density down to 1.8 fA cm−2. For fast firing, a high phosphorus concentration of 4 × 1020 cm−3 is required for comparably high passivation quality with a recombination current density down to 1.3 fA cm−2. A p-type POLO back-junction solar cell featuring such ex situ doped sputtered POLO contacts with a cell efficiency of 22.4% and an open-circuit voltage of 714 mV is fabricated. To our knowledge, this is the highest open-circuit voltage published so far with sputtered POLO contacts.
AB - The impact of the phosphorus doping density in direct current-sputtered polysilicon layers on surface passivation and contact resistance by fabricating polysilicon on oxide (POLO) contacts is studied, when applying doping densities ranging from 3 × 1019 to 4 × 1020 cm−3. Hydrogenation is performed either via a hydrogen-releasing AlOx layer and postdeposition anneals in forming gas using a tube furnace at 400 °C, or by rapid firing of an AlOx/SiNy stack in a conveyor belt furnace at 810 °C. The study shows that the forming gas anneal of the weakly in situ phosphorus-doped poly-Si layers with AlOx enables a passivation quality with an implied open-circuit voltage of up to 734 mV and a recombination current density down to 1.8 fA cm−2. For fast firing, a high phosphorus concentration of 4 × 1020 cm−3 is required for comparably high passivation quality with a recombination current density down to 1.3 fA cm−2. A p-type POLO back-junction solar cell featuring such ex situ doped sputtered POLO contacts with a cell efficiency of 22.4% and an open-circuit voltage of 714 mV is fabricated. To our knowledge, this is the highest open-circuit voltage published so far with sputtered POLO contacts.
KW - passivating contacts
KW - polysilicon
KW - screen printing
KW - sputtering
UR - http://www.scopus.com/inward/record.url?scp=85133866842&partnerID=8YFLogxK
U2 - 10.1002/solr.202200409
DO - 10.1002/solr.202200409
M3 - Article
AN - SCOPUS:85133866842
VL - 6
JO - Solar RRL
JF - Solar RRL
IS - 9
M1 - 2200409
ER -