Details
| Original language | English |
|---|---|
| Number of pages | 1 |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 2002 Quantum Electronics and Laser Science (QELS) - Long Beach, United States Duration: 19 May 2002 → 22 May 2002 |
Conference
| Conference | 2002 Quantum Electronics and Laser Science (QELS) |
|---|---|
| Abbreviated title | QELS |
| Country/Territory | United States |
| City | Long Beach |
| Period | 19 May 2002 → 22 May 2002 |
Abstract
The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
ASJC Scopus subject areas
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2002. Paper presented at 2002 Quantum Electronics and Laser Science (QELS), Long Beach, California, United States.
Research output: Contribution to conference › Paper › Research › peer review
}
TY - CONF
T1 - Spin relaxation in n-doped GaAs/AlGaAs quantum wells
AU - Bender, Markus
AU - Oestreich, Michael
AU - Rühle, W. W.
PY - 2002
Y1 - 2002
N2 - The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
AB - The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
UR - http://www.scopus.com/inward/record.url?scp=0036361102&partnerID=8YFLogxK
M3 - Paper
T2 - 2002 Quantum Electronics and Laser Science (QELS)
Y2 - 19 May 2002 through 22 May 2002
ER -