Details
| Original language | English |
|---|---|
| Pages (from-to) | 747-755 |
| Number of pages | 9 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 2 |
| Issue number | 3 |
| Publication status | Published - Sept 1996 |
| Externally published | Yes |
Abstract
Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 2, No. 3, 09.1996, p. 747-755.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Spin quantum beats in semiconductors
AU - Oestreich, Michael
AU - Hallstein, Sascha
AU - Rühle, Wolfgang W.
N1 - Funding information: Manuscript received August 30, 1996; revised January 20, 1997. This work was supported by the Deutsche Forschungsgemeinschaft (Schwer-punktsprogramm Quantenkohärenz in Halbleitern) and performed at the Max-Planck-Institut für Festkörperforschung in Stuttgart. M. Oestreich and W. W. Rühle are with the Fachbereich Physik der Philipps-Universität, D-35032 Marburg, Germany. S. Hallstein is with the Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany. Publisher Item Identifier S 1077-260X(96)09595-0.
PY - 1996/9
Y1 - 1996/9
N2 - Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.
AB - Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.
UR - http://www.scopus.com/inward/record.url?scp=0030230845&partnerID=8YFLogxK
U2 - 10.1109/2944.571776
DO - 10.1109/2944.571776
M3 - Article
AN - SCOPUS:0030230845
VL - 2
SP - 747
EP - 755
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 3
ER -