Spin noise spectroscopy of ZnO

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

Research Organisations

External Research Organisations

  • Universite Toulouse III - Paul Sabatier (UT3)
  • Technische Universität Braunschweig
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Details

Original languageEnglish
Title of host publicationPhysics of Semiconductors
Subtitle of host publicationProceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Pages69-70
Number of pages2
Publication statusPublished - 31 Dec 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 29 Jul 20123 Aug 2012

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (electronic)1551-7616

Abstract

We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

Keywords

    defects, nanoporous ZnO, spin relaxation time

ASJC Scopus subject areas

Cite this

Spin noise spectroscopy of ZnO. / Horn, Hauke; Berski, Fabian; Balocchi, A. et al.
Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 69-70 (AIP Conference Proceedings; Vol. 1566).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Horn, H, Berski, F, Balocchi, A, Marie, X, Mansur-Al-Suleiman, M, Bakin, A, Waag, A, Hübner, J & Oestreich, M 2013, Spin noise spectroscopy of ZnO. in Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, vol. 1566, pp. 69-70, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 29 Jul 2012. https://doi.org/10.1063/1.4848289
Horn, H., Berski, F., Balocchi, A., Marie, X., Mansur-Al-Suleiman, M., Bakin, A., Waag, A., Hübner, J., & Oestreich, M. (2013). Spin noise spectroscopy of ZnO. In Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 69-70). (AIP Conference Proceedings; Vol. 1566). https://doi.org/10.1063/1.4848289
Horn H, Berski F, Balocchi A, Marie X, Mansur-Al-Suleiman M, Bakin A et al. Spin noise spectroscopy of ZnO. In Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 69-70. (AIP Conference Proceedings). doi: 10.1063/1.4848289
Horn, Hauke ; Berski, Fabian ; Balocchi, A. et al. / Spin noise spectroscopy of ZnO. Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. pp. 69-70 (AIP Conference Proceedings).
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abstract = "We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.",
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AU - Horn, Hauke

AU - Berski, Fabian

AU - Balocchi, A.

AU - Marie, X.

AU - Mansur-Al-Suleiman, M.

AU - Bakin, A.

AU - Waag, A.

AU - Hübner, Jens

AU - Oestreich, Michael

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N2 - We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

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KW - spin relaxation time

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