Details
| Original language | English |
|---|---|
| Title of host publication | Spintronics II |
| Publication status | Published - 18 Aug 2009 |
| Event | Spintronics II - San Diego, CA, United States Duration: 2 Aug 2009 → 5 Aug 2009 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 7398 |
| ISSN (Print) | 0277-786X |
Abstract
We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.
Keywords
- Noise, Optics, Semiconductor, Spin dynamics, Spintronics
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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- BibTeX
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Spintronics II. 2009. 739802 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7398).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Spin noise spectroscopy in semiconductors
AU - Oestreich, Michael
AU - Römer, Michael
AU - Müller, Georg
AU - Schuh, Dieter
AU - Wegscheider, Werner
AU - Hübner, Jens
PY - 2009/8/18
Y1 - 2009/8/18
N2 - We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.
AB - We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.
KW - Noise
KW - Optics
KW - Semiconductor
KW - Spin dynamics
KW - Spintronics
UR - http://www.scopus.com/inward/record.url?scp=70449623468&partnerID=8YFLogxK
U2 - 10.1117/12.824177
DO - 10.1117/12.824177
M3 - Conference contribution
AN - SCOPUS:70449623468
SN - 9780819476883
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Spintronics II
T2 - Spintronics II
Y2 - 2 August 2009 through 5 August 2009
ER -