Spin blockade in capacitively coupled quantum dots

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Original languageEnglish
Pages (from-to)606-608
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number4
Publication statusPublished - 23 Jul 2004

Abstract

The spin blockade in capacitively coupled quantum dots was discussed using local anodic oxidation (LAO) and electron beam lithography. The tunability of the interdot coupling as a function of top gate voltage and magnetic field was studied. It was observed that the spatial separation of edge channels in the leads was much smaller in LAO devices. The results show that the spin blockade is useful for spin detection in LAO based quantum dot devices.

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Spin blockade in capacitively coupled quantum dots. / Rogge, M. C.; Fühner, C.; Keyser, U. F. et al.
In: Applied Physics Letters, Vol. 85, No. 4, 23.07.2004, p. 606-608.

Research output: Contribution to journalArticleResearchpeer review

Rogge MC, Fühner C, Keyser UF, Haug RJ. Spin blockade in capacitively coupled quantum dots. Applied Physics Letters. 2004 Jul 23;85(4):606-608. doi: 10.1063/1.1776613, 10.15488/2832
Rogge, M. C. ; Fühner, C. ; Keyser, U. F. et al. / Spin blockade in capacitively coupled quantum dots. In: Applied Physics Letters. 2004 ; Vol. 85, No. 4. pp. 606-608.
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AU - Haug, R. J.

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