Details
| Original language | English |
|---|---|
| Pages (from-to) | 96-102 |
| Number of pages | 7 |
| Journal | IEEE journal of photovoltaics |
| Volume | 8 |
| Issue number | 1 |
| Early online date | 13 Dec 2017 |
| Publication status | Published - Jan 2018 |
Abstract
We examine the stability of the c-Si surface passivation quality by spatial atomic-layer-deposited aluminum oxide (Al2O3), plasma-enhanced chemical vapor deposited silicon nitride (SiNx), and Al2O3/SiNx stacks under illumination with two different spectra. The Al2O3-passivated c-Si surfaces annealed at 350 °C show a weak degradation due to UV illumination, with surface recombination velocities (SRVs) of 122 cm/s after receiving a ultraviolet (UV) dose of 275 kWh/m2. Silicon samples passivated with Al2O3 layers that received a fast-firing step show an improvement due to UV illumination with a reduction of the SRVs initially from 14 to 5 cm/s for single Al2O3 layers. For the fired Al2O3 layers the negative fixed charge density increases from-6 × 1012 cm-2 up to-1.2×1013 cm-2 during UV illumination. We demonstrate that for the SiNx and the fired Al2O3 single layers, photons with energy greater than 3.4 eV are necessary to reduce the passivation quality. In contrast, low-temperature-annealed Al2O3 single layers and nonfired Al2O3/SiNx stacks showed a degradation already under illumination with a halogen lamp. Importantly, we observe a perfectly stable passivation on boron-diffused p+ emitter for fired Al2O3/SiNx stacks featuring a stable saturation current density of 18 fA/cm2 for a p+ sheet resistance of 90 ω/sq.
Keywords
- Accelerated testing, Aluminum oxide (AlO), Carrier lifetime, Crystalline silicon, Degradation, Long-term stability, Silicon nitride (SiNx ), Surface passivation, ultraviolet (UV) stability
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 8, No. 1, 01.2018, p. 96-102.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Spectra-dependent stability of the passivation quality of Al2O3/c-Si interfaces
AU - Veith-Wolf, Boris
AU - Witteck, Robert
AU - Morlier, Arnaud
AU - Schulte-Huxel, Henning
AU - Vogt, Malte Ruben
AU - Schmidt, Jan
PY - 2018/1
Y1 - 2018/1
N2 - We examine the stability of the c-Si surface passivation quality by spatial atomic-layer-deposited aluminum oxide (Al2O3), plasma-enhanced chemical vapor deposited silicon nitride (SiNx), and Al2O3/SiNx stacks under illumination with two different spectra. The Al2O3-passivated c-Si surfaces annealed at 350 °C show a weak degradation due to UV illumination, with surface recombination velocities (SRVs) of 122 cm/s after receiving a ultraviolet (UV) dose of 275 kWh/m2. Silicon samples passivated with Al2O3 layers that received a fast-firing step show an improvement due to UV illumination with a reduction of the SRVs initially from 14 to 5 cm/s for single Al2O3 layers. For the fired Al2O3 layers the negative fixed charge density increases from-6 × 1012 cm-2 up to-1.2×1013 cm-2 during UV illumination. We demonstrate that for the SiNx and the fired Al2O3 single layers, photons with energy greater than 3.4 eV are necessary to reduce the passivation quality. In contrast, low-temperature-annealed Al2O3 single layers and nonfired Al2O3/SiNx stacks showed a degradation already under illumination with a halogen lamp. Importantly, we observe a perfectly stable passivation on boron-diffused p+ emitter for fired Al2O3/SiNx stacks featuring a stable saturation current density of 18 fA/cm2 for a p+ sheet resistance of 90 ω/sq.
AB - We examine the stability of the c-Si surface passivation quality by spatial atomic-layer-deposited aluminum oxide (Al2O3), plasma-enhanced chemical vapor deposited silicon nitride (SiNx), and Al2O3/SiNx stacks under illumination with two different spectra. The Al2O3-passivated c-Si surfaces annealed at 350 °C show a weak degradation due to UV illumination, with surface recombination velocities (SRVs) of 122 cm/s after receiving a ultraviolet (UV) dose of 275 kWh/m2. Silicon samples passivated with Al2O3 layers that received a fast-firing step show an improvement due to UV illumination with a reduction of the SRVs initially from 14 to 5 cm/s for single Al2O3 layers. For the fired Al2O3 layers the negative fixed charge density increases from-6 × 1012 cm-2 up to-1.2×1013 cm-2 during UV illumination. We demonstrate that for the SiNx and the fired Al2O3 single layers, photons with energy greater than 3.4 eV are necessary to reduce the passivation quality. In contrast, low-temperature-annealed Al2O3 single layers and nonfired Al2O3/SiNx stacks showed a degradation already under illumination with a halogen lamp. Importantly, we observe a perfectly stable passivation on boron-diffused p+ emitter for fired Al2O3/SiNx stacks featuring a stable saturation current density of 18 fA/cm2 for a p+ sheet resistance of 90 ω/sq.
KW - Accelerated testing
KW - Aluminum oxide (AlO)
KW - Carrier lifetime
KW - Crystalline silicon
KW - Degradation
KW - Long-term stability
KW - Silicon nitride (SiNx )
KW - Surface passivation
KW - ultraviolet (UV) stability
UR - http://www.scopus.com/inward/record.url?scp=85038840827&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2017.2775147
DO - 10.1109/JPHOTOV.2017.2775147
M3 - Article
AN - SCOPUS:85038840827
VL - 8
SP - 96
EP - 102
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
ER -