Details
| Original language | English |
|---|---|
| Article number | 112105 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 11 |
| Publication status | Published - 16 Mar 2009 |
Abstract
We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 94, No. 11, 112105, 16.03.2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy
AU - Römer, Michael
AU - Hübner, Jens
AU - Oestreich, Michael
N1 - Funding information: This work has been supported by the Deutsche Forschungsgemeinschaft and the German Federal Ministry of Education and Research (BMBF) by the funding program nanoQUIT.
PY - 2009/3/16
Y1 - 2009/3/16
N2 - We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
AB - We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
UR - http://www.scopus.com/inward/record.url?scp=63049117161&partnerID=8YFLogxK
U2 - 10.1063/1.3098074
DO - 10.1063/1.3098074
M3 - Article
AN - SCOPUS:63049117161
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 112105
ER -