Details
| Original language | English |
|---|---|
| Article number | 214001 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 31 |
| Issue number | 21 |
| Early online date | 19 Mar 2019 |
| Publication status | Published - 29 May 2019 |
Abstract
Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.
Keywords
- silicon surface, space charge layer, surface transport
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Journal of Physics Condensed Matter, Vol. 31, No. 21, 214001, 29.05.2019.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Space charge layer effects in silicon studied by in situ surface transport
AU - Edler, Frederik
AU - Miccoli, Ilio
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
PY - 2019/5/29
Y1 - 2019/5/29
N2 - Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.
AB - Electronic properties of low dimensional structures on surfaces can be comprehensively explored by surface transport experiments. However, the surface sensitivity of this technique to atomic structures comes along with the control of bulk related electron paths and internal interfaces. Here we analyzed the role of Schottky-barriers and space charge layers for Si-surfaces. By means of a metal submonolayer coverage deposited on vicinal Si(1 1 1), we reliably accessed subsurface transport channels via angle- and temperature-dependent in situ transport measurements. In particular, high temperature treatments performed under ultra high vacuum conditions led to the formation of surface-near bulk defects, e.g. SiC-interstitials. Obviously, these defects act as p-type dopants and easily overcompensate lightly n-doped Si substrates.
KW - silicon surface
KW - space charge layer
KW - surface transport
UR - http://www.scopus.com/inward/record.url?scp=85064725213&partnerID=8YFLogxK
U2 - 10.1088/1361-648X/ab094e
DO - 10.1088/1361-648X/ab094e
M3 - Article
C2 - 30790785
AN - SCOPUS:85064725213
VL - 31
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 21
M1 - 214001
ER -