Details
| Original language | English |
|---|---|
| Pages (from-to) | 143-147 |
| Number of pages | 5 |
| Journal | Applied surface science |
| Volume | 254 |
| Issue number | 1 SPEC. ISS. |
| Early online date | 31 Jul 2007 |
| Publication status | Published - 31 Oct 2007 |
Abstract
At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
Keywords
- CaF, Germanium, Molecular beam epitaxy, Semiconductor-insulator multilayers, Silicon, Solid phase epitaxy, Spot profile analysis of low energy electron diffraction
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- General Physics and Astronomy
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
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In: Applied surface science, Vol. 254, No. 1 SPEC. ISS., 31.10.2007, p. 143-147.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Solid phase epitaxy of Ge films on CaF 2 /Si(1 1 1)
AU - Rugeramigabo, E. P.
AU - Deiter, C.
AU - Wollschläger, J.
PY - 2007/10/31
Y1 - 2007/10/31
N2 - At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
AB - At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
KW - CaF
KW - Germanium
KW - Molecular beam epitaxy
KW - Semiconductor-insulator multilayers
KW - Silicon
KW - Solid phase epitaxy
KW - Spot profile analysis of low energy electron diffraction
UR - http://www.scopus.com/inward/record.url?scp=35148863622&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2007.07.167
DO - 10.1016/j.apsusc.2007.07.167
M3 - Article
AN - SCOPUS:35148863622
VL - 254
SP - 143
EP - 147
JO - Applied surface science
JF - Applied surface science
SN - 0169-4332
IS - 1 SPEC. ISS.
ER -