Details
Original language | English |
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Article number | 102107 |
Journal | Applied physics letters |
Volume | 95 |
Issue number | 10 |
Publication status | Published - 7 Sept 2009 |
Abstract
Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 95, No. 10, 102107, 07.09.2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3
AU - Afanas'ev, V. V.
AU - Badylevich, M.
AU - Stesmans, A.
AU - Laha, A.
AU - Osten, H. J.
AU - Fissel, A.
PY - 2009/9/7
Y1 - 2009/9/7
N2 - Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.
AB - Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.
UR - http://www.scopus.com/inward/record.url?scp=70249131791&partnerID=8YFLogxK
U2 - 10.1063/1.3204019
DO - 10.1063/1.3204019
M3 - Article
AN - SCOPUS:70249131791
VL - 95
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 10
M1 - 102107
ER -