Details
| Original language | English |
|---|---|
| Pages (from-to) | 703-706 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | 1998 IEEE International Electron Devices Meeting - San Francisco, United States Duration: 6 Dec 1998 → 9 Dec 1998 |
Abstract
We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Technical Digest - International Electron Devices Meeting, 1998, p. 703-706.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology
AU - Knoll, D.
AU - Heinemann, B.
AU - Osten, H. J.
AU - Ehwald, K. E.
AU - Tillack, B.
AU - Schley, P.
AU - Barth, R.
AU - Matthes, M.
AU - Park, Kwang Soo
AU - Kim, Young
AU - Winkler, W.
PY - 1998
Y1 - 1998
N2 - We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.
AB - We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0032276830&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0032276830
SP - 703
EP - 706
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
T2 - 1998 IEEE International Electron Devices Meeting
Y2 - 6 December 1998 through 9 December 1998
ER -