Details
| Original language | English |
|---|---|
| Article number | 493 |
| Journal | Nanoscale research letters |
| Volume | 7 |
| Publication status | Published - 2012 |
| Externally published | Yes |
Abstract
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400 °C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
Keywords
- Droplet epitaxy, III-V semiconductors, Quantum dots, Radiative lifetime, Single-photon emission
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Nanoscale research letters, Vol. 7, 493, 2012.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
AU - Benyoucef, Mohamed
AU - Zuerbig, Verena
AU - Reithmaier, Johann Peter
AU - Kroh, Tim
AU - Schell, Andreas W.
AU - Aichele, Thomas
AU - Benson, Oliver
N1 - Funding information: We acknowledge F. Schnabel, A. Dirk, and K. Fuchs for the technical support. This work was supported by the BMBF (QuaHL-Rep).
PY - 2012
Y1 - 2012
N2 - The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400 °C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
AB - The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400 °C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
KW - Droplet epitaxy
KW - III-V semiconductors
KW - Quantum dots
KW - Radiative lifetime
KW - Single-photon emission
UR - http://www.scopus.com/inward/record.url?scp=84866106562&partnerID=8YFLogxK
U2 - 10.1186/1556-276X-7-493
DO - 10.1186/1556-276X-7-493
M3 - Article
AN - SCOPUS:84866106562
VL - 7
JO - Nanoscale research letters
JF - Nanoscale research letters
SN - 1931-7573
M1 - 493
ER -