Details
| Original language | English |
|---|---|
| Pages (from-to) | 15-19 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 40 |
| Issue number | 1-8 |
| Publication status | Published - 1 Jan 1996 |
| Externally published | Yes |
Abstract
Single-electron tunneling through laterally confined double-barrier heterostructures is studied as a function of the electron accumulation in the quantum dot. In the strong-charging case we observe a current-voltage staircase with smooth plateaus, whereas an intricate fine structure evolves on top of the plateaus under weak-charging conditions. Single-electron-tunneling spectroscopy in high magnetic fields is employed to demonstrate that both tunneling through excited quantum-dot levels and fluctuations of the local density of states in the emitter contribute to this fine structure. PACS numbers: 73.20.Dx, 73.40.Gk.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Solid-State Electronics, Vol. 40, No. 1-8, 01.01.1996, p. 15-19.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier heterostructures
AU - Schmidt, T.
AU - Tewordt, M.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Förster, A.
AU - Lüth, H.
N1 - Funding information: This work was supported by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie.W e thank V. 1. Fal’ko for stimulating discussions.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Single-electron tunneling through laterally confined double-barrier heterostructures is studied as a function of the electron accumulation in the quantum dot. In the strong-charging case we observe a current-voltage staircase with smooth plateaus, whereas an intricate fine structure evolves on top of the plateaus under weak-charging conditions. Single-electron-tunneling spectroscopy in high magnetic fields is employed to demonstrate that both tunneling through excited quantum-dot levels and fluctuations of the local density of states in the emitter contribute to this fine structure. PACS numbers: 73.20.Dx, 73.40.Gk.
AB - Single-electron tunneling through laterally confined double-barrier heterostructures is studied as a function of the electron accumulation in the quantum dot. In the strong-charging case we observe a current-voltage staircase with smooth plateaus, whereas an intricate fine structure evolves on top of the plateaus under weak-charging conditions. Single-electron-tunneling spectroscopy in high magnetic fields is employed to demonstrate that both tunneling through excited quantum-dot levels and fluctuations of the local density of states in the emitter contribute to this fine structure. PACS numbers: 73.20.Dx, 73.40.Gk.
UR - http://www.scopus.com/inward/record.url?scp=0029711169&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(95)00205-7
DO - 10.1016/0038-1101(95)00205-7
M3 - Article
AN - SCOPUS:0029711169
VL - 40
SP - 15
EP - 19
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1-8
ER -