Details
| Original language | English |
|---|---|
| Article number | 021 |
| Pages (from-to) | 877-880 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 10 |
| Issue number | 6 |
| Publication status | Published - 1 Dec 1995 |
| Externally published | Yes |
Abstract
The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 10, No. 6, 021, 01.12.1995, p. 877-880.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron tunnelling transistor as a current rectifier with potential-controlled current polarity
AU - Weis, J.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
AB - The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
UR - http://www.scopus.com/inward/record.url?scp=0029324504&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/10/6/021
DO - 10.1088/0268-1242/10/6/021
M3 - Article
AN - SCOPUS:0029324504
VL - 10
SP - 877
EP - 880
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 6
M1 - 021
ER -