Details
| Original language | English |
|---|---|
| Pages (from-to) | 2230-2236 |
| Number of pages | 7 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 55 |
| Issue number | 4 |
| Publication status | Published - 1 Jan 1997 |
| Externally published | Yes |
Abstract
We fabricated submicrometer-diameter double-barrier diodes from four wafers with different barrier-thickness asymmetry. All samples exhibit staircaselike features in the current-voltage characteristic at the current threshold due to single-electron tunneling. Our study focuses on the properties of the first current step which arises from tunneling through the energetically lowest discrete electron state within the double-barrier region. The analysis of the bias position of the step allows a spatial spectroscopy of the vertical position of the lowest discrete level in the double-barrier region. The magnitude of the step is in excellent agreement with theory for all barrier-thickness asymmetries whereas the broadening of the step edge exceeds the lifetime-related width of the discrete state by one order of magnitude.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 4, 01.01.1997, p. 2230-2236.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron transport in small resonant-tunneling diodes with various barrier-thickness asymmetries
AU - Schmidt, T.
AU - Haug, R.
AU - Klitzing, K.
AU - Förster, A.
AU - Lüth, H.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - We fabricated submicrometer-diameter double-barrier diodes from four wafers with different barrier-thickness asymmetry. All samples exhibit staircaselike features in the current-voltage characteristic at the current threshold due to single-electron tunneling. Our study focuses on the properties of the first current step which arises from tunneling through the energetically lowest discrete electron state within the double-barrier region. The analysis of the bias position of the step allows a spatial spectroscopy of the vertical position of the lowest discrete level in the double-barrier region. The magnitude of the step is in excellent agreement with theory for all barrier-thickness asymmetries whereas the broadening of the step edge exceeds the lifetime-related width of the discrete state by one order of magnitude.
AB - We fabricated submicrometer-diameter double-barrier diodes from four wafers with different barrier-thickness asymmetry. All samples exhibit staircaselike features in the current-voltage characteristic at the current threshold due to single-electron tunneling. Our study focuses on the properties of the first current step which arises from tunneling through the energetically lowest discrete electron state within the double-barrier region. The analysis of the bias position of the step allows a spatial spectroscopy of the vertical position of the lowest discrete level in the double-barrier region. The magnitude of the step is in excellent agreement with theory for all barrier-thickness asymmetries whereas the broadening of the step edge exceeds the lifetime-related width of the discrete state by one order of magnitude.
UR - http://www.scopus.com/inward/record.url?scp=0000153721&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.55.2230
DO - 10.1103/PhysRevB.55.2230
M3 - Article
AN - SCOPUS:0000153721
VL - 55
SP - 2230
EP - 2236
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 4
ER -