Details
| Original language | English |
|---|---|
| Pages (from-to) | 82-86 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 227 |
| Issue number | 1-4 |
| Publication status | Published - Sept 1996 |
| Externally published | Yes |
Abstract
Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
Keywords
- Quantum dots, Single-electron tunneling, Spectroscopy
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 82-86.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron transistors with quantum dots
AU - Haug, R. J.
AU - Dilger, M.
AU - Schmidt, T.
AU - Blick, R. H.
AU - Klitzing, K. V.
AU - Eberl, K.
N1 - Funding information: Discussions with V. Falko and D. Pfannkuche, and samples supplied by A. F6rster and H. Liith are gratefully acknowledged. Part of this work has been supported by the Bundesministerium ffir Bil dung, Wissenschaft, Forschung und Technologie.
PY - 1996/9
Y1 - 1996/9
N2 - Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
AB - Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
KW - Quantum dots
KW - Single-electron tunneling
KW - Spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0030234118&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(96)00356-0
DO - 10.1016/0921-4526(96)00356-0
M3 - Article
AN - SCOPUS:0030234118
VL - 227
SP - 82
EP - 86
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
ER -