Details
| Original language | English |
|---|---|
| Pages (from-to) | 995-999 |
| Number of pages | 5 |
| Journal | Solid state electronics |
| Volume | 37 |
| Issue number | 4-6 |
| Publication status | Published - 1 Jan 1994 |
| Externally published | Yes |
Abstract
Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Solid state electronics, Vol. 37, No. 4-6, 01.01.1994, p. 995-999.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron transistors realized in in-plane-gate and top-gate technology
AU - Haug, R. J.
AU - Pothier, H.
AU - Weis, J.
AU - v. Klitzing, K.
AU - Ploog, K.
N1 - Funding information: Part of the work has been supported by the Bundesministerium fiir Forschung und Technolo-gie. H.P. is under contract SC-915165 of the European Community.
PY - 1994/1/1
Y1 - 1994/1/1
N2 - Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
AB - Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0028407385&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)90344-1
DO - 10.1016/0038-1101(94)90344-1
M3 - Article
AN - SCOPUS:0028407385
VL - 37
SP - 995
EP - 999
JO - Solid state electronics
JF - Solid state electronics
SN - 0038-1101
IS - 4-6
ER -