Details
| Original language | English |
|---|---|
| Pages (from-to) | 1982-1984 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 73 |
| Issue number | 14 |
| Publication status | Published - 1 Dec 1998 |
| Externally published | Yes |
Abstract
We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 73, No. 14, 01.12.1998, p. 1982-1984.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-electron effects in slim semiconductor superlattices
AU - Schmidt, T.
AU - Haug, R. J.
AU - V. Klitzing, K.
AU - Eberl, K.
PY - 1998/12/1
Y1 - 1998/12/1
N2 - We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
AB - We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
UR - http://www.scopus.com/inward/record.url?scp=0242421247&partnerID=8YFLogxK
U2 - 10.1063/1.122342
DO - 10.1063/1.122342
M3 - Article
AN - SCOPUS:0242421247
VL - 73
SP - 1982
EP - 1984
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 14
ER -