Details
| Original language | English |
|---|---|
| Pages (from-to) | 2546-2550 |
| Number of pages | 5 |
| Journal | THIN SOLID FILMS |
| Volume | 518 |
| Issue number | 9 |
| Publication status | Published - 26 Feb 2010 |
Abstract
We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111) make the obtained structures suitable for silicon-on-insulator applications. First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 °C in an ultra-high vacuum.
Keywords
- Silicon-on-insulator, Solid-phase epitaxy
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 518, No. 9, 26.02.2010, p. 2546-2550.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
AU - Fissel, A.
AU - Dargis, R.
AU - Bugiel, E.
AU - Schwendt, D.
AU - Wietler, T.
AU - Krügener, J.
AU - Laha, A.
AU - Osten, H. J.
PY - 2010/2/26
Y1 - 2010/2/26
N2 - We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111) make the obtained structures suitable for silicon-on-insulator applications. First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 °C in an ultra-high vacuum.
AB - We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111) make the obtained structures suitable for silicon-on-insulator applications. First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 °C in an ultra-high vacuum.
KW - Silicon-on-insulator
KW - Solid-phase epitaxy
UR - http://www.scopus.com/inward/record.url?scp=76049090488&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.09.139
DO - 10.1016/j.tsf.2009.09.139
M3 - Article
AN - SCOPUS:76049090488
VL - 518
SP - 2546
EP - 2550
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 9
ER -