Details
| Original language | English |
|---|---|
| Pages (from-to) | 51-57 |
| Number of pages | 7 |
| Journal | Journal of Nanoelectronics and Optoelectronics |
| Volume | 6 |
| Issue number | 1 |
| Publication status | Published - Mar 2011 |
| Externally published | Yes |
Keywords
- Aharonov bohm effect, Gate controlled, Neutral exciton, Quantum dot, Quantum ring, Selective etching
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: Journal of Nanoelectronics and Optoelectronics, Vol. 6, No. 1, 03.2011, p. 51-57.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
AU - Ding, F.
AU - Li, B.
AU - Akopian, N.
AU - Perinetti, U.
AU - Chen, Y. H.
AU - Peeters, F. M.
AU - Rastelli, A.
AU - Zwiller, V.
AU - Schmidt, O. G.
PY - 2011/3
Y1 - 2011/3
KW - Aharonov bohm effect
KW - Gate controlled
KW - Neutral exciton
KW - Quantum dot
KW - Quantum ring
KW - Selective etching
UR - http://www.scopus.com/inward/record.url?scp=79956134753&partnerID=8YFLogxK
U2 - 10.1166/jno.2011.1132
DO - 10.1166/jno.2011.1132
M3 - Article
AN - SCOPUS:79956134753
VL - 6
SP - 51
EP - 57
JO - Journal of Nanoelectronics and Optoelectronics
JF - Journal of Nanoelectronics and Optoelectronics
SN - 1555-130X
IS - 1
ER -