Details
| Original language | English |
|---|---|
| Pages (from-to) | 1987-1992 |
| Number of pages | 6 |
| Journal | Microelectronics reliability |
| Volume | 52 |
| Issue number | 9-10 |
| Publication status | Published - Sept 2012 |
Abstract
Al/Ti/TiN metallizations form TiAl 3 layers during the annealing process. The influence of TiAl 3 layers on the thermal-electrical- mechanical behaviour is investigated here. For high temperature automotive and industrial applications in a 0.35 μm CMOS process the test structures have to be approved. The thermal-electrical-mechanical behaviour of the test structures is calculated by simulations. Two aluminium deposition temperatures of 250 °C and 470 °C were considered. The Ti-based layer thicknesses forming the TiAl 3 as well as the whole metallization thickness were investigated. The simulations show a good correlation with measurements.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Microelectronics reliability, Vol. 52, No. 9-10, 09.2012, p. 1987-1992.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Simulation of the influence of TiAl 3 layers on the thermal-electrical and mechanical behaviour of Al metallizations
AU - Kludt, J.
AU - Weide-Zaage, K.
AU - Ackermann, M.
AU - Hein, V.
N1 - Funding Information: This collaboration was supported by RELY – Design for RELIABILITY (01M3091). A part of the European CATRENE programme for research and development. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/9
Y1 - 2012/9
N2 - Al/Ti/TiN metallizations form TiAl 3 layers during the annealing process. The influence of TiAl 3 layers on the thermal-electrical- mechanical behaviour is investigated here. For high temperature automotive and industrial applications in a 0.35 μm CMOS process the test structures have to be approved. The thermal-electrical-mechanical behaviour of the test structures is calculated by simulations. Two aluminium deposition temperatures of 250 °C and 470 °C were considered. The Ti-based layer thicknesses forming the TiAl 3 as well as the whole metallization thickness were investigated. The simulations show a good correlation with measurements.
AB - Al/Ti/TiN metallizations form TiAl 3 layers during the annealing process. The influence of TiAl 3 layers on the thermal-electrical- mechanical behaviour is investigated here. For high temperature automotive and industrial applications in a 0.35 μm CMOS process the test structures have to be approved. The thermal-electrical-mechanical behaviour of the test structures is calculated by simulations. Two aluminium deposition temperatures of 250 °C and 470 °C were considered. The Ti-based layer thicknesses forming the TiAl 3 as well as the whole metallization thickness were investigated. The simulations show a good correlation with measurements.
UR - http://www.scopus.com/inward/record.url?scp=84866729013&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2012.06.129
DO - 10.1016/j.microrel.2012.06.129
M3 - Article
AN - SCOPUS:84866729013
VL - 52
SP - 1987
EP - 1992
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 9-10
ER -