Details
| Original language | English |
|---|---|
| Pages (from-to) | 1398-1402 |
| Number of pages | 5 |
| Journal | Microelectronics reliability |
| Volume | 48 |
| Issue number | 8-9 |
| Publication status | Published - Aug 2008 |
Abstract
The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics reliability, Vol. 48, No. 8-9, 08.2008, p. 1398-1402.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Simulation of migration effects in nanoscaled copper metallizations
AU - Weide-Zaage, Kirsten
AU - Kashanchi, Farzan
AU - Aubel, Oliver
N1 - Funding Information: This work is supported by the Bundesministerium für Forschung und Technologie BMBF under SIMKON Project Contract No. 01M3183A BMBF 523 PT-DLR. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/8
Y1 - 2008/8
N2 - The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.
AB - The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.
UR - http://www.scopus.com/inward/record.url?scp=50249145689&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2008.06.025
DO - 10.1016/j.microrel.2008.06.025
M3 - Article
AN - SCOPUS:50249145689
VL - 48
SP - 1398
EP - 1402
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 8-9
ER -