Details
| Original language | German |
|---|---|
| Title of host publication | Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing |
| Subtitle of host publication | Hannover, March 24 - 26, 2003 |
| Place of Publication | Hannover |
| Pages | 311-316 |
| Publication status | Published - 2003 |
| Event | International Scientific Colloquium Modelling for Electromagnetic Processing - Hannover Duration: 24 Mar 2003 → 26 Mar 2003 Conference number: 3 |
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Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth. / Muiznieks, A.; Madzulis, I.; Dadzis, K. et al.
Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing: Hannover, March 24 - 26, 2003. Hannover, 2003. p. 311-316.
Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing: Hannover, March 24 - 26, 2003. Hannover, 2003. p. 311-316.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
Muiznieks, A, Madzulis, I, Dadzis, K & Mühlbauer, A 2003, Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth. in Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing: Hannover, March 24 - 26, 2003. Hannover, pp. 311-316, International Scientific Colloquium Modelling for Electromagnetic Processing, Hannover, 24 Mar 2003.
Muiznieks, A., Madzulis, I., Dadzis, K., & Mühlbauer, A. (2003). Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth. In Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing: Hannover, March 24 - 26, 2003 (pp. 311-316).
Muiznieks A, Madzulis I, Dadzis K, Mühlbauer A. Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth. In Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing: Hannover, March 24 - 26, 2003. Hannover. 2003. p. 311-316
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@inproceedings{cbcdcb10acd34a56a05b6cfbc64c89d3,
title = "Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth",
author = "A. Muiznieks and I. Madzulis and K. Dadzis and A. M{\"u}hlbauer",
year = "2003",
language = "Deutsch",
isbn = "3-00-011073-9",
pages = "311--316",
booktitle = "Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing",
note = "International Scientific Colloquium Modelling for Electromagnetic Processing, MEO 2003 ; Conference date: 24-03-2003 Through 26-03-2003",
}
Download
TY - GEN
T1 - Simplified model for Monte Carlo simulation of point defect dynamics during industrial silicon crystal growth
AU - Muiznieks, A.
AU - Madzulis, I.
AU - Dadzis, K.
AU - Mühlbauer, A.
N1 - Conference code: 3
PY - 2003
Y1 - 2003
M3 - Aufsatz in Konferenzband
SN - 3-00-011073-9
SP - 311
EP - 316
BT - Proceedings of the International Scientific Colloquium Modelling for Electromagnetic Processing
CY - Hannover
T2 - International Scientific Colloquium Modelling for Electromagnetic Processing
Y2 - 24 March 2003 through 26 March 2003
ER -