Details
| Original language | English |
|---|---|
| Title of host publication | 2020 22nd European Conference on Power Electronics and Applications |
| Subtitle of host publication | EPE 2020 ECCE Europe |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9789075815368 |
| Publication status | Published - 2020 |
| Event | 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe - Lyon, France Duration: 7 Sept 2020 → 11 Sept 2020 |
Abstract
This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings between parasitics of wide-bandgap (WBG) power semiconductor modules, based on analytical equations and on 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces. The simple structures e. g. two parallel round wires with different directions of current, are considered to calculate the parasitic inductance and the magnetic coupling. The analytical models are verified by ANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structures based on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power module is 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last, the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed.
Keywords
- 3D Packaging, Magnetic Coupling, Parasitic Capacitance, Parasitic Inductance, SiC Module
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Safety, Risk, Reliability and Quality
- Mathematics(all)
- Control and Optimization
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
2020 22nd European Conference on Power Electronics and Applications: EPE 2020 ECCE Europe. Institute of Electrical and Electronics Engineers Inc., 2020. 9215953.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Simplified Calculation of Parasitic Elements and Mutual Couplings of Wide-bandgap Power Semiconductor Modules
AU - Ali, Mohammad
AU - Friebe, Jens
AU - Mertens, Axel
N1 - Funding information: This work was supported by the German Ministry of Economics and Technology - 19236 N (FVA).
PY - 2020
Y1 - 2020
N2 - This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings between parasitics of wide-bandgap (WBG) power semiconductor modules, based on analytical equations and on 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces. The simple structures e. g. two parallel round wires with different directions of current, are considered to calculate the parasitic inductance and the magnetic coupling. The analytical models are verified by ANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structures based on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power module is 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last, the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed.
AB - This paper presents a simplified calculation of parasitic elements (LC) and mutual couplings between parasitics of wide-bandgap (WBG) power semiconductor modules, based on analytical equations and on 3D FEM. A simplified parallel plate capacitor is derived from stray fields of different plate surfaces. The simple structures e. g. two parallel round wires with different directions of current, are considered to calculate the parasitic inductance and the magnetic coupling. The analytical models are verified by ANSYS Q3D results. This method includes stray fields of capacitive and inductive parasitic structures based on a simplified geometric approach. The package of a SiC-MOSFET half-bridge power module is 3D-modeled and the parasitic elements are extracted. The analytical models are verified by numerical results. At last, the influence of parasitic elements and mutual couplings on the switching characteristics is analyzed.
KW - 3D Packaging
KW - Magnetic Coupling
KW - Parasitic Capacitance
KW - Parasitic Inductance
KW - SiC Module
UR - http://www.scopus.com/inward/record.url?scp=85094878625&partnerID=8YFLogxK
U2 - 10.23919/epe20ecceeurope43536.2020.9215953
DO - 10.23919/epe20ecceeurope43536.2020.9215953
M3 - Conference contribution
AN - SCOPUS:85094878625
BT - 2020 22nd European Conference on Power Electronics and Applications
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
Y2 - 7 September 2020 through 11 September 2020
ER -