Details
| Original language | English |
|---|---|
| Article number | 044903 |
| Journal | Journal of applied physics |
| Volume | 104 |
| Issue number | 4 |
| Publication status | Published - 2008 |
| Externally published | Yes |
Abstract
Thin Al2 O3 films with a thickness of 7-30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n -type and 2.0 Ω cm p -type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2 O3. A high density of negative fixed charges was detected in the Al2 O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p -type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2 O3. Furthermore, a brief comparison is presented between the surface passivations achieved for thermal and plasma-assisted ALD Al2 O3 films prepared in the same ALD reactor.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 104, No. 4, 044903, 2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Silicon surface passivation by atomic layer deposited Al2 O 3
AU - Hoex, B.
AU - Schmidt, J.
AU - Pohl, P.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
PY - 2008
Y1 - 2008
N2 - Thin Al2 O3 films with a thickness of 7-30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n -type and 2.0 Ω cm p -type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2 O3. A high density of negative fixed charges was detected in the Al2 O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p -type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2 O3. Furthermore, a brief comparison is presented between the surface passivations achieved for thermal and plasma-assisted ALD Al2 O3 films prepared in the same ALD reactor.
AB - Thin Al2 O3 films with a thickness of 7-30 nm synthesized by plasma-assisted atomic layer deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different doping concentrations. The level of surface passivation in this study was determined by techniques based on photoconductance, photoluminescence, and infrared emission. Effective surface recombination velocities of 2 and 6 cm/s were obtained on 1.9 Ω cm n -type and 2.0 Ω cm p -type c-Si, respectively. An effective surface recombination velocity below 1 cm/s was unambiguously obtained for nearly intrinsic c-Si passivated by Al2 O3. A high density of negative fixed charges was detected in the Al2 O3 films and its impact on the level of surface passivation was demonstrated experimentally. The negative fixed charge density results in a flat injection level dependence of the effective lifetime on p -type c-Si and explains the excellent passivation of highly B-doped c-Si by Al2 O3. Furthermore, a brief comparison is presented between the surface passivations achieved for thermal and plasma-assisted ALD Al2 O3 films prepared in the same ALD reactor.
UR - http://www.scopus.com/inward/record.url?scp=50849137808&partnerID=8YFLogxK
U2 - 10.1063/1.2963707
DO - 10.1063/1.2963707
M3 - Article
AN - SCOPUS:50849137808
VL - 104
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 4
M1 - 044903
ER -