Details
| Original language | English |
|---|---|
| Pages (from-to) | 319-324 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 27 |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012 - Leuven, Belgium Duration: 3 Apr 2012 → 5 Apr 2012 |
Abstract
The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, σp = (4±3)×10 -16 cm2, was found to be independent of energy. The electron capture cross section σn in the upper half of the bandgap decreases from σn = (7±4)×10-15 cm2 at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 kΩ/, which was reduced to 6 kΩ/ for a surface charge density of -2×1013 cm-2 obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm2, which show a pronounced dependence on surface charge density.
Keywords
- Aluminum oxide, Capture cross section, Inversion layer solar cell, Passivation
ASJC Scopus subject areas
- Energy(all)
- General Energy
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Energy Procedia, Vol. 27, 2012, p. 319-324.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Silicon surface passivation by Al2O3
T2 - 2nd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2012
AU - Werner, F.
AU - Cosceev, A.
AU - Schmidt, J.
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under contract number 0325050 (“ALD”).
PY - 2012
Y1 - 2012
N2 - The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, σp = (4±3)×10 -16 cm2, was found to be independent of energy. The electron capture cross section σn in the upper half of the bandgap decreases from σn = (7±4)×10-15 cm2 at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 kΩ/, which was reduced to 6 kΩ/ for a surface charge density of -2×1013 cm-2 obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm2, which show a pronounced dependence on surface charge density.
AB - The interface between p- and n-type FZ-Si and an amorphous aluminum oxide (Al2O3) surface passivation layer deposited by plasma-assisted atomic layer deposition (ALD) was investigated by frequency-dependent conductance measurements. The hole capture cross section in the lower half of the bandgap, σp = (4±3)×10 -16 cm2, was found to be independent of energy. The electron capture cross section σn in the upper half of the bandgap decreases from σn = (7±4)×10-15 cm2 at midgap over two orders of magnitude towards the conduction band edge. Numerical simulations of the effective surface recombination velocity based on these recombination parameters show a good agreement with experimental surface recombination velocities for a wide range of excess carrier and surface charge densities. Carrier transport in the inversion layer formed at the n-Si/Al2O3 interface was investigated yielding a sheet resistance of 15 kΩ/, which was reduced to 6 kΩ/ for a surface charge density of -2×1013 cm-2 obtained by corona charging. The applicability of Al2O3 inversion layers as emitters in n-type inversion layer solar cells was demonstrated by short circuit current densities of up to 25 mA/cm2, which show a pronounced dependence on surface charge density.
KW - Aluminum oxide
KW - Capture cross section
KW - Inversion layer solar cell
KW - Passivation
UR - http://www.scopus.com/inward/record.url?scp=84897145100&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2012.07.070
DO - 10.1016/j.egypro.2012.07.070
M3 - Conference article
AN - SCOPUS:84897145100
VL - 27
SP - 319
EP - 324
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
Y2 - 3 April 2012 through 5 April 2012
ER -