Details
| Original language | English |
|---|---|
| Pages (from-to) | 512-517 |
| Number of pages | 6 |
| Journal | Microelectronics journal |
| Volume | 39 |
| Issue number | 3-4 |
| Early online date | 3 Dec 2007 |
| Publication status | Published - Mar 2008 |
Abstract
The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.
Keywords
- Molecular beam epitaxy, Nanocluster, Nanostructures, Quantum well, Rare-earth oxides, Silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics journal, Vol. 39, No. 3-4, 03.2008, p. 512-517.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Silicon in functional epitaxial oxides
T2 - A new group of nanostructures
AU - Fissel, A.
AU - Laha, A.
AU - Bugiel, E.
AU - Kühne, D.
AU - Czernohorsky, M.
AU - Dargis, R.
AU - Osten, H. J.
PY - 2008/3
Y1 - 2008/3
N2 - The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.
AB - The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.
KW - Molecular beam epitaxy
KW - Nanocluster
KW - Nanostructures
KW - Quantum well
KW - Rare-earth oxides
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=40649108869&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2007.11.007
DO - 10.1016/j.mejo.2007.11.007
M3 - Article
AN - SCOPUS:40649108869
VL - 39
SP - 512
EP - 517
JO - Microelectronics journal
JF - Microelectronics journal
SN - 0026-2692
IS - 3-4
ER -