Details
| Original language | English |
|---|---|
| Title of host publication | 2020 International Wafer Level Packaging Conference, IWLPC 2020 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9781944543167 |
| ISBN (print) | 978-1-6654-0250-7 |
| Publication status | Published - 2020 |
| Event | 2020 International Wafer Level Packaging Conference, IWLPC 2020 - San Jose, United States Duration: 13 Oct 2020 → 30 Oct 2020 |
Abstract
For a novel packaging application, a method is needed to bond silicon chips on a wafer surface. One of the main requirements is a comparably thin and structurable adhesive layer. The adhesive layer has to have a thickness of approximately 10 to 20 μm and is required to cover the edges of the silicon die. As this application is quite unique, thorough research has been done to identify applicable materials and processes. Common technologies like die bonding, pin transfer, jetting etc. cannot be used as the adhesive volume has to be controlled very precise and the dimensions of the adhesive bond are too coarse for the application. The desired thickness of the adhesion layer can only be achieved using photostructurable materials. A parameter analysis has been done in order to determine applicability of the photostructurable material as an adhesive layer. Therefore, die bonding temperature and bonding pressure have been varied. The influence of the parameter variation has been demonstrated using die shear testing and cross sectional imaging. Two geometrical variations of the adhesive layer are compared. A sufficient parameter set could be identified using this approach.
Keywords
- die bonding adhesive, face-down bonding, novel bonding technology, Photostructurable adhesive, thin adhesive layer
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
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2020 International Wafer Level Packaging Conference, IWLPC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9375868.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Silicon Die Bonding using a Photostructurable Adhesive Material
AU - Hollstein, Kai
AU - Weide-Zaage, Kirsten
PY - 2020
Y1 - 2020
N2 - For a novel packaging application, a method is needed to bond silicon chips on a wafer surface. One of the main requirements is a comparably thin and structurable adhesive layer. The adhesive layer has to have a thickness of approximately 10 to 20 μm and is required to cover the edges of the silicon die. As this application is quite unique, thorough research has been done to identify applicable materials and processes. Common technologies like die bonding, pin transfer, jetting etc. cannot be used as the adhesive volume has to be controlled very precise and the dimensions of the adhesive bond are too coarse for the application. The desired thickness of the adhesion layer can only be achieved using photostructurable materials. A parameter analysis has been done in order to determine applicability of the photostructurable material as an adhesive layer. Therefore, die bonding temperature and bonding pressure have been varied. The influence of the parameter variation has been demonstrated using die shear testing and cross sectional imaging. Two geometrical variations of the adhesive layer are compared. A sufficient parameter set could be identified using this approach.
AB - For a novel packaging application, a method is needed to bond silicon chips on a wafer surface. One of the main requirements is a comparably thin and structurable adhesive layer. The adhesive layer has to have a thickness of approximately 10 to 20 μm and is required to cover the edges of the silicon die. As this application is quite unique, thorough research has been done to identify applicable materials and processes. Common technologies like die bonding, pin transfer, jetting etc. cannot be used as the adhesive volume has to be controlled very precise and the dimensions of the adhesive bond are too coarse for the application. The desired thickness of the adhesion layer can only be achieved using photostructurable materials. A parameter analysis has been done in order to determine applicability of the photostructurable material as an adhesive layer. Therefore, die bonding temperature and bonding pressure have been varied. The influence of the parameter variation has been demonstrated using die shear testing and cross sectional imaging. Two geometrical variations of the adhesive layer are compared. A sufficient parameter set could be identified using this approach.
KW - die bonding adhesive
KW - face-down bonding
KW - novel bonding technology
KW - Photostructurable adhesive
KW - thin adhesive layer
UR - http://www.scopus.com/inward/record.url?scp=85103687279&partnerID=8YFLogxK
U2 - 10.23919/IWLPC52010.2020.9375868
DO - 10.23919/IWLPC52010.2020.9375868
M3 - Conference contribution
AN - SCOPUS:85103687279
SN - 978-1-6654-0250-7
BT - 2020 International Wafer Level Packaging Conference, IWLPC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Wafer Level Packaging Conference, IWLPC 2020
Y2 - 13 October 2020 through 30 October 2020
ER -