Details
| Original language | English |
|---|---|
| Pages (from-to) | 1051-1054 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 6 |
| Early online date | 9 Jun 1999 |
| Publication status | Published - Jun 1999 |
| Externally published | Yes |
| Event | 1998 European Materials Research Society Meeting (E-MRS 1998 Spring Meeting) - Strasbourg, France Duration: 16 Jun 1998 → 19 Jun 1998 |
Abstract
The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower process temperatures an effective conservation of dopant distributions. One method for trapping doping profiles is the admixture of a small concentration of carbon to the Si. This paper reports on the Co silicide formation on Si0.999C0.001(001) substrate layers. The Co films were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscattering and measuring the electrical resistance at room temperature. Compared with Si(001) a small increase of the thermal budget for the CoSi2 formation on Si0.999C0.001(001) has been found. For samples annealed at 650 °C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Grueneisen equation reveals a good electrical quality of the prepared CoSi2 films.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Solid-State Electronics, Vol. 43, No. 6, 06.1999, p. 1051-1054.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Silicide reaction of Co with Si0.999C0.001
AU - Teichert, S.
AU - Falke, M.
AU - Giesler, H.
AU - Beddies, G.
AU - Hinneberg, H. J.
AU - Lippert, G.
AU - Griesche, J.
AU - Osten, H. J.
PY - 1999/6
Y1 - 1999/6
N2 - The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower process temperatures an effective conservation of dopant distributions. One method for trapping doping profiles is the admixture of a small concentration of carbon to the Si. This paper reports on the Co silicide formation on Si0.999C0.001(001) substrate layers. The Co films were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscattering and measuring the electrical resistance at room temperature. Compared with Si(001) a small increase of the thermal budget for the CoSi2 formation on Si0.999C0.001(001) has been found. For samples annealed at 650 °C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Grueneisen equation reveals a good electrical quality of the prepared CoSi2 films.
AB - The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower process temperatures an effective conservation of dopant distributions. One method for trapping doping profiles is the admixture of a small concentration of carbon to the Si. This paper reports on the Co silicide formation on Si0.999C0.001(001) substrate layers. The Co films were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscattering and measuring the electrical resistance at room temperature. Compared with Si(001) a small increase of the thermal budget for the CoSi2 formation on Si0.999C0.001(001) has been found. For samples annealed at 650 °C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Grueneisen equation reveals a good electrical quality of the prepared CoSi2 films.
UR - http://www.scopus.com/inward/record.url?scp=0032656646&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(99)00023-4
DO - 10.1016/S0038-1101(99)00023-4
M3 - Conference article
AN - SCOPUS:0032656646
VL - 43
SP - 1051
EP - 1054
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 6
T2 - 1998 European Materials Research Society Meeting (E-MRS 1998 Spring Meeting)
Y2 - 16 June 1998 through 19 June 1998
ER -