Details
| Original language | English |
|---|---|
| Pages (from-to) | 1293-1296 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 0 |
| Issue number | 4 |
| Publication status | Published - 23 Jun 2003 |
| Event | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 30 Sept 2002 → 3 Oct 2002 |
Abstract
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 0, No. 4, 23.06.2003, p. 1293-1296.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Shot noise in tunneling through a quantum dot array
AU - Kiesslich, G.
AU - Wacker, A.
AU - Schöll, E.
AU - Nauen, A.
AU - Hohls, F.
AU - Haug, R. J.
PY - 2003/6/23
Y1 - 2003/6/23
N2 - The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
AB - The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression.
UR - http://www.scopus.com/inward/record.url?scp=0242671287&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303072
DO - 10.1002/pssc.200303072
M3 - Conference article
AN - SCOPUS:0242671287
VL - 0
SP - 1293
EP - 1296
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 4
T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002
Y2 - 30 September 2002 through 3 October 2002
ER -