Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

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Original languageEnglish
Article number113316
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number11
Publication statusPublished - 30 Mar 2004

Abstract

We investigate the noise properties of a GaAs/AlxGa1−xAs resonant-tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observe super-Poissonian shot noise up to values of the Fano factor α≈10.

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Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum. / Nauen, A.; Hohls, F.; Könemann, J. et al.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 11, 113316, 30.03.2004.

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