Details
| Original language | English |
|---|---|
| Article number | 013106 |
| Journal | Applied Physics Letters |
| Volume | 113 |
| Issue number | 1 |
| Publication status | Published - 2 Jul 2018 |
Abstract
By characterizing and manipulating the conductive properties of single Ag nano-grain boundaries with electromigration - originally considered only as a detrimental effect for metallic nanostructures - we show that atomic point contacts can be generated at well-defined locations with extreme reliability in ultra-thin (5 nm) and ultra-small (minimum width 16 nm) Ag nanostructures, deposited on hydrogen terminated low-doped Si(100) samples. Single contacts were always obtained once the smallest constriction of the structures was below the average grain size of the Ag films and competing thermal migration was suppressed. These ultra-thin and laterally open structures on Si provide complete accessibility for local characterisation of the molecular junction.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 113, No. 1, 013106, 02.07.2018.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Shaping single atomic junctions in ultra-thin Ag structures by electromigration
AU - Chatterjee, Atasi
AU - Heidenblut, Torsten
AU - Edler, Frederik
AU - Olsen, Ejvind
AU - Stöckmann, J. P.
AU - Tegenkamp, Christoph
AU - Pfnür, Herbert
N1 - © 2018 Author(s).
PY - 2018/7/2
Y1 - 2018/7/2
N2 - By characterizing and manipulating the conductive properties of single Ag nano-grain boundaries with electromigration - originally considered only as a detrimental effect for metallic nanostructures - we show that atomic point contacts can be generated at well-defined locations with extreme reliability in ultra-thin (5 nm) and ultra-small (minimum width 16 nm) Ag nanostructures, deposited on hydrogen terminated low-doped Si(100) samples. Single contacts were always obtained once the smallest constriction of the structures was below the average grain size of the Ag films and competing thermal migration was suppressed. These ultra-thin and laterally open structures on Si provide complete accessibility for local characterisation of the molecular junction.
AB - By characterizing and manipulating the conductive properties of single Ag nano-grain boundaries with electromigration - originally considered only as a detrimental effect for metallic nanostructures - we show that atomic point contacts can be generated at well-defined locations with extreme reliability in ultra-thin (5 nm) and ultra-small (minimum width 16 nm) Ag nanostructures, deposited on hydrogen terminated low-doped Si(100) samples. Single contacts were always obtained once the smallest constriction of the structures was below the average grain size of the Ag films and competing thermal migration was suppressed. These ultra-thin and laterally open structures on Si provide complete accessibility for local characterisation of the molecular junction.
UR - http://www.scopus.com/inward/record.url?scp=85049732247&partnerID=8YFLogxK
U2 - 10.1063/1.5040405
DO - 10.1063/1.5040405
M3 - Article
AN - SCOPUS:85049732247
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 013106
ER -