Details
| Original language | English |
|---|---|
| Article number | 658 |
| Number of pages | 15 |
| Journal | Scientific Reports |
| Volume | 10 |
| Issue number | 1 |
| Publication status | Published - 20 Jan 2020 |
Abstract
By applying an interdigitated back contacted solar cell concept with poly-Si on oxide passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact of the implemented initially intrinsic poly-Si region between p-type poly-Si and n-type poly-Si regions is investigated. Two recombination paths are identified: The recombination at the interface between the initially intrinsic poly-Si and the wafer as well as the recombination across the resulting p(i)n diode on the rear side which is aimed to be reduced by introducing an initially intrinsic region. By using test structures, it is demonstrated that the width of the initially intrinsic region ((i) poly-Si region) has a strong influence on the recombination current through the p(i)n diode and that this initially intrinsic region needs to be about 30 μm wide to sufficiently reduce the recombination across the p(i)n diode. Lateral and depth-resolved time of flight secondary ion mass spectrometry analysis shows that the high-temperature annealing step causes a strong lateral inter-diffusion of donor and acceptor atoms into the initially intrinsic region. This diffusion has a positive impact on the passivation quality at the c-Si/SiOx/i poly-Si interface and is thus essential for achieving an independently confirmed efficiency of 26.1% with 30 μm-wide initially intrinsic poly-Si regions.
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In: Scientific Reports, Vol. 10, No. 1, 658, 20.01.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell
AU - Hollemann, Christina
AU - Haase, Felix
AU - Rienäcker, Michael
AU - Barnscheidt, V.
AU - Krügener, Jan
AU - Folchert, Nils
AU - Brendel, Rolf
AU - Richter, Susanne
AU - Großer, Stephan
AU - Sauter, Eduard
AU - Hübner, Jens
AU - Oestreich, Michael
AU - Peibst, Robby
N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs (BMWi) and the state of lower Saxony for funding this work, Hilke Fischer, Heike Kohlenberg, M. Stratmann, Bianca Gehring, Annika Rauge witz, Sabine Schmidt, (all from ISFH) as well as Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing. The publication of this article was funded by the Open Access Fund of the Leibniz Universität Hannover.
PY - 2020/1/20
Y1 - 2020/1/20
N2 - By applying an interdigitated back contacted solar cell concept with poly-Si on oxide passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact of the implemented initially intrinsic poly-Si region between p-type poly-Si and n-type poly-Si regions is investigated. Two recombination paths are identified: The recombination at the interface between the initially intrinsic poly-Si and the wafer as well as the recombination across the resulting p(i)n diode on the rear side which is aimed to be reduced by introducing an initially intrinsic region. By using test structures, it is demonstrated that the width of the initially intrinsic region ((i) poly-Si region) has a strong influence on the recombination current through the p(i)n diode and that this initially intrinsic region needs to be about 30 μm wide to sufficiently reduce the recombination across the p(i)n diode. Lateral and depth-resolved time of flight secondary ion mass spectrometry analysis shows that the high-temperature annealing step causes a strong lateral inter-diffusion of donor and acceptor atoms into the initially intrinsic region. This diffusion has a positive impact on the passivation quality at the c-Si/SiOx/i poly-Si interface and is thus essential for achieving an independently confirmed efficiency of 26.1% with 30 μm-wide initially intrinsic poly-Si regions.
AB - By applying an interdigitated back contacted solar cell concept with poly-Si on oxide passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact of the implemented initially intrinsic poly-Si region between p-type poly-Si and n-type poly-Si regions is investigated. Two recombination paths are identified: The recombination at the interface between the initially intrinsic poly-Si and the wafer as well as the recombination across the resulting p(i)n diode on the rear side which is aimed to be reduced by introducing an initially intrinsic region. By using test structures, it is demonstrated that the width of the initially intrinsic region ((i) poly-Si region) has a strong influence on the recombination current through the p(i)n diode and that this initially intrinsic region needs to be about 30 μm wide to sufficiently reduce the recombination across the p(i)n diode. Lateral and depth-resolved time of flight secondary ion mass spectrometry analysis shows that the high-temperature annealing step causes a strong lateral inter-diffusion of donor and acceptor atoms into the initially intrinsic region. This diffusion has a positive impact on the passivation quality at the c-Si/SiOx/i poly-Si interface and is thus essential for achieving an independently confirmed efficiency of 26.1% with 30 μm-wide initially intrinsic poly-Si regions.
UR - http://www.scopus.com/inward/record.url?scp=85078313279&partnerID=8YFLogxK
U2 - 10.1038/s41598-019-57310-0
DO - 10.1038/s41598-019-57310-0
M3 - Article
C2 - 31959783
AN - SCOPUS:85078313279
VL - 10
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 658
ER -