Details
| Original language | English |
|---|---|
| Pages (from-to) | 569-587 |
| Number of pages | 19 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 43 |
| Issue number | 2 |
| Publication status | Published - 17 Aug 2010 |
Abstract
Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 43, No. 2, 17.08.2010, p. 569-587.
Research output: Contribution to journal › Review article › Research › peer review
}
TY - JOUR
T1 - Semiconductor spin noise spectroscopy
T2 - Fundamentals, accomplishments, and challenges
AU - Müller, Georg M.
AU - Oestreich, Michael
AU - Römer, Michael
AU - Hübner, Jens
N1 - Funding information: This work was supported by the German Science Foundation (DFG priority program 1285 ‘Semiconductor Spintronics’), the Federal Ministry for Education and Research (BMBF NanoQUIT), and Centre for Quantum Engineering and Space-Time Research in Hannover (QUEST). G.M.M. acknowledges support from the Evangelisches Studienwerk.
PY - 2010/8/17
Y1 - 2010/8/17
N2 - Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.
AB - Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.
UR - http://www.scopus.com/inward/record.url?scp=78649633496&partnerID=8YFLogxK
U2 - 10.1016/j.physe.2010.08.010
DO - 10.1016/j.physe.2010.08.010
M3 - Review article
AN - SCOPUS:78649633496
VL - 43
SP - 569
EP - 587
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2
ER -