Self-organized growth of quantum dot-tunnel barrier systems

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  • Max Planck Institute for Solid State Research (MPI-FKF)
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Original languageEnglish
Pages (from-to)533-539
Number of pages7
JournalSuperlattices and microstructures
Volume21
Issue number4
Publication statusPublished - Jun 1997

Abstract

Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.

Keywords

    MBE-regrowth, Single-electron transistor, Transport measurements

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Cite this

Self-organized growth of quantum dot-tunnel barrier systems. / Dilger, M.; Eberl, K.; Haug, R. J. et al.
In: Superlattices and microstructures, Vol. 21, No. 4, 06.1997, p. 533-539.

Research output: Contribution to journalArticleResearchpeer review

Dilger M, Eberl K, Haug RJ, Von Klitzing K. Self-organized growth of quantum dot-tunnel barrier systems. Superlattices and microstructures. 1997 Jun;21(4):533-539. doi: 10.1006/spmi.1996.0190
Dilger, M. ; Eberl, K. ; Haug, R. J. et al. / Self-organized growth of quantum dot-tunnel barrier systems. In: Superlattices and microstructures. 1997 ; Vol. 21, No. 4. pp. 533-539.
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abstract = "Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al0.33Ga0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.",
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AU - Eberl, K.

AU - Haug, R. J.

AU - Von Klitzing, K.

N1 - Funding information: The authors are indebted to J. Weis for helpful discussions. We would like to thank B. Schönherr, C. Lange and F. Schartner for expert technological help and D. Galpin for a critical reading of the manuscript. This work was supported by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie.

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