Details
| Original language | English |
|---|---|
| Article number | 2100246 |
| Journal | physica status solidi (RRL) – Rapid Research Letters |
| Volume | 15 |
| Issue number | 9 |
| Early online date | 23 Jun 2021 |
| Publication status | Published - 16 Sept 2021 |
Abstract
The selectivity parameter S 10 of titanium oxide (TiO x)-based selective contacts on n-type silicon is experimentally extracted through measurements of the specific contact resistivity ρ c and the recombination current density prefactor J 0, both parameters measured on fully Al-metallized samples. The contact resistivity ρ c is determined applying the Cox and Strack method and the J 0 values are extracted using dynamic infrared lifetime mapping, allowing for contactless lifetime measurements on fully metallized silicon samples in contrast to conventionally applied lifetime measurement techniques. The highest selectivity after annealing of an n-Si/SiO y/TiO x/Al contact is determined to be S 10 = 11.6, which corresponds to a maximum achievable efficiency of 24.1% for this type of electron-selective contact. The maximum selectivity is achieved after low-temperature annealing at 500 °C or through a contact-firing step at a set-peak temperature of 820 °C in an industrial conveyor-belt furnace, as used in today's commercial solar cell production.
Keywords
- atomic layer deposition, contact resistivities, electron-selective contacts, selectivities, SiO /TiO /Al stacks, titanium oxide
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- General Materials Science
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In: physica status solidi (RRL) – Rapid Research Letters, Vol. 15, No. 9, 2100246, 16.09.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Selectivity of TiOx ‐Based Electron‐Selective Contacts on n‐Type Crystalline Silicon and Solar Cell Efficiency Potential
AU - Titova, Valeriya
AU - Schmidt, Jan
N1 - Funding Information: Funding was proved by the German State of Lower Saxony and the German Federal Environmental Foundation (DBU). Open access funding enabled and organized by Projekt DEAL.
PY - 2021/9/16
Y1 - 2021/9/16
N2 - The selectivity parameter S 10 of titanium oxide (TiO x)-based selective contacts on n-type silicon is experimentally extracted through measurements of the specific contact resistivity ρ c and the recombination current density prefactor J 0, both parameters measured on fully Al-metallized samples. The contact resistivity ρ c is determined applying the Cox and Strack method and the J 0 values are extracted using dynamic infrared lifetime mapping, allowing for contactless lifetime measurements on fully metallized silicon samples in contrast to conventionally applied lifetime measurement techniques. The highest selectivity after annealing of an n-Si/SiO y/TiO x/Al contact is determined to be S 10 = 11.6, which corresponds to a maximum achievable efficiency of 24.1% for this type of electron-selective contact. The maximum selectivity is achieved after low-temperature annealing at 500 °C or through a contact-firing step at a set-peak temperature of 820 °C in an industrial conveyor-belt furnace, as used in today's commercial solar cell production.
AB - The selectivity parameter S 10 of titanium oxide (TiO x)-based selective contacts on n-type silicon is experimentally extracted through measurements of the specific contact resistivity ρ c and the recombination current density prefactor J 0, both parameters measured on fully Al-metallized samples. The contact resistivity ρ c is determined applying the Cox and Strack method and the J 0 values are extracted using dynamic infrared lifetime mapping, allowing for contactless lifetime measurements on fully metallized silicon samples in contrast to conventionally applied lifetime measurement techniques. The highest selectivity after annealing of an n-Si/SiO y/TiO x/Al contact is determined to be S 10 = 11.6, which corresponds to a maximum achievable efficiency of 24.1% for this type of electron-selective contact. The maximum selectivity is achieved after low-temperature annealing at 500 °C or through a contact-firing step at a set-peak temperature of 820 °C in an industrial conveyor-belt furnace, as used in today's commercial solar cell production.
KW - atomic layer deposition
KW - contact resistivities
KW - electron-selective contacts
KW - selectivities
KW - SiO /TiO /Al stacks
KW - titanium oxide
UR - http://www.scopus.com/inward/record.url?scp=85109380127&partnerID=8YFLogxK
U2 - 10.1002/pssr.202100246
DO - 10.1002/pssr.202100246
M3 - Article
VL - 15
JO - physica status solidi (RRL) – Rapid Research Letters
JF - physica status solidi (RRL) – Rapid Research Letters
SN - 1862-6270
IS - 9
M1 - 2100246
ER -