Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

Research output: Contribution to journal › Article › Research › peer review

Authors

  • A. Hattab
  • J. L. Perrossier
  • F. Meyer
  • M. Barthula
  • H. J. Osten
  • J. Griesche

External Research Organisations

  • Universite Paris-Sud XI
  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalMaterials Science and Engineering: B
Volume89
Issue number1-3
Early online date21 Jan 2002
Publication statusPublished - 14 Feb 2002
Externally publishedYes

Abstract

In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1-x-yGexCy pseudomorphic alloys is investigated as a function of the alloy composition. The epilayers were grown either by RTCVD or MBE. Electrical characterizations of contacts were achieved through current-voltage measurements in the temperature range 150-300 K. As soon as the amount of C exceeds 1.1%, the ideality factor n increases up to high values, such as 1.7 for y = 1.8%. In addition, the SBHs (Φb) decrease with lowering temperature, while the ideality factors (n) become larger. A linear dependence Φb) (n) is observed for all the samples. Similar trends have already been reported for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface. The SBHs of laterally homogeneous contacts can be obtained by extrapolation of experimental Φb) (n) plots to n=1. The results show homogeneous interfaces for the Si1-xGex binary alloys and inhomogeneous interfaces for the carbon-containing alloys. The inhomogeneities of the interface are discussed in terms of local strain or (and) defects due to the C-incorporation.

Keywords

    Inhomogeneity, Schottky diode, SiGeC

ASJC Scopus subject areas

Cite this

Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys. / Hattab, A.; Perrossier, J. L.; Meyer, F. et al.
In: Materials Science and Engineering: B, Vol. 89, No. 1-3, 14.02.2002, p. 284-287.

Research output: Contribution to journal › Article › Research › peer review

Hattab, A, Perrossier, JL, Meyer, F, Barthula, M, Osten, HJ & Griesche, J 2002, 'Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys', Materials Science and Engineering: B, vol. 89, no. 1-3, pp. 284-287. https://doi.org/10.1016/S0921-5107(01)00800-5
Hattab, A., Perrossier, J. L., Meyer, F., Barthula, M., Osten, H. J., & Griesche, J. (2002). Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys. Materials Science and Engineering: B, 89(1-3), 284-287. https://doi.org/10.1016/S0921-5107(01)00800-5
Hattab A, Perrossier JL, Meyer F, Barthula M, Osten HJ, Griesche J. Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys. Materials Science and Engineering: B. 2002 Feb 14;89(1-3):284-287. Epub 2002 Jan 21. doi: 10.1016/S0921-5107(01)00800-5
Hattab, A. ; Perrossier, J. L. ; Meyer, F. et al. / Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys. In: Materials Science and Engineering: B. 2002 ; Vol. 89, No. 1-3. pp. 284-287.
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@article{da241dc9a32047e2892d19964a4b3278,
title = "Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys",
abstract = "In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1-x-yGexCy pseudomorphic alloys is investigated as a function of the alloy composition. The epilayers were grown either by RTCVD or MBE. Electrical characterizations of contacts were achieved through current-voltage measurements in the temperature range 150-300 K. As soon as the amount of C exceeds 1.1%, the ideality factor n increases up to high values, such as 1.7 for y = 1.8%. In addition, the SBHs (Φb) decrease with lowering temperature, while the ideality factors (n) become larger. A linear dependence Φb) (n) is observed for all the samples. Similar trends have already been reported for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface. The SBHs of laterally homogeneous contacts can be obtained by extrapolation of experimental Φb) (n) plots to n=1. The results show homogeneous interfaces for the Si1-xGex binary alloys and inhomogeneous interfaces for the carbon-containing alloys. The inhomogeneities of the interface are discussed in terms of local strain or (and) defects due to the C-incorporation.",
keywords = "Inhomogeneity, Schottky diode, SiGeC",
author = "A. Hattab and Perrossier, {J. L.} and F. Meyer and M. Barthula and Osten, {H. J.} and J. Griesche",
year = "2002",
month = feb,
day = "14",
doi = "10.1016/S0921-5107(01)00800-5",
language = "English",
volume = "89",
pages = "284--287",
journal = "Materials Science and Engineering: B",
issn = "0921-5107",
publisher = "Elsevier Ltd.",
number = "1-3",

}

Download

TY - JOUR

T1 - Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

AU - Hattab, A.

AU - Perrossier, J. L.

AU - Meyer, F.

AU - Barthula, M.

AU - Osten, H. J.

AU - Griesche, J.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1-x-yGexCy pseudomorphic alloys is investigated as a function of the alloy composition. The epilayers were grown either by RTCVD or MBE. Electrical characterizations of contacts were achieved through current-voltage measurements in the temperature range 150-300 K. As soon as the amount of C exceeds 1.1%, the ideality factor n increases up to high values, such as 1.7 for y = 1.8%. In addition, the SBHs (Φb) decrease with lowering temperature, while the ideality factors (n) become larger. A linear dependence Φb) (n) is observed for all the samples. Similar trends have already been reported for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface. The SBHs of laterally homogeneous contacts can be obtained by extrapolation of experimental Φb) (n) plots to n=1. The results show homogeneous interfaces for the Si1-xGex binary alloys and inhomogeneous interfaces for the carbon-containing alloys. The inhomogeneities of the interface are discussed in terms of local strain or (and) defects due to the C-incorporation.

AB - In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1-x-yGexCy pseudomorphic alloys is investigated as a function of the alloy composition. The epilayers were grown either by RTCVD or MBE. Electrical characterizations of contacts were achieved through current-voltage measurements in the temperature range 150-300 K. As soon as the amount of C exceeds 1.1%, the ideality factor n increases up to high values, such as 1.7 for y = 1.8%. In addition, the SBHs (Φb) decrease with lowering temperature, while the ideality factors (n) become larger. A linear dependence Φb) (n) is observed for all the samples. Similar trends have already been reported for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface. The SBHs of laterally homogeneous contacts can be obtained by extrapolation of experimental Φb) (n) plots to n=1. The results show homogeneous interfaces for the Si1-xGex binary alloys and inhomogeneous interfaces for the carbon-containing alloys. The inhomogeneities of the interface are discussed in terms of local strain or (and) defects due to the C-incorporation.

KW - Inhomogeneity

KW - Schottky diode

KW - SiGeC

UR - http://www.scopus.com/inward/record.url?scp=0037074868&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(01)00800-5

DO - 10.1016/S0921-5107(01)00800-5

M3 - Article

AN - SCOPUS:0037074868

VL - 89

SP - 284

EP - 287

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

IS - 1-3

ER -