Details
| Original language | English |
|---|---|
| Article number | 225002 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 26 |
| Issue number | 22 |
| Publication status | Published - 9 May 2014 |
Abstract
In this investigation we tested the role of Cr impurities on the strongly spin-polarized surface states of ultra-thin epitaxially grown Bi(1 1 1) films by measuring surface magnetoconductance and the Hall effect in conjunction with low-energy electron diffraction at a low temperature (10K). Compared with Fe and Co, investigated recently, Cr atoms turned out to have scattering cross-sections that are about a factor of three higher than the former atoms. Nevertheless, only a small electron donation (0.03e/atom) was found for Cr. It also exhibits strong spin-orbit scattering, as judged from quantitative analysis of weak localization effects. As a result, all spin-dependent selection rules are gradually relaxed with increasing Cr concentration, so that the initially observed weak anti-localization shifts towards weak localization. The non-monotonic decrease of conductance as a function of Cr concentration, even at 10K, indicates high diffusivity and activated adsorption into its final optimal adsorption site.
Keywords
- Bi(1 1 1) films, impurity scattering, surface magnetoconductance
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Journal of Physics Condensed Matter, Vol. 26, No. 22, 225002, 09.05.2014.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Scattering of charge carriers by Cr impurities in magnetotransport on a Bi(1 1 1) ultra-thin film
AU - Kröger, Philipp
AU - Sologub, S.
AU - Tegenkamp, Christoph
AU - Pfnür, Herbert
PY - 2014/5/9
Y1 - 2014/5/9
N2 - In this investigation we tested the role of Cr impurities on the strongly spin-polarized surface states of ultra-thin epitaxially grown Bi(1 1 1) films by measuring surface magnetoconductance and the Hall effect in conjunction with low-energy electron diffraction at a low temperature (10K). Compared with Fe and Co, investigated recently, Cr atoms turned out to have scattering cross-sections that are about a factor of three higher than the former atoms. Nevertheless, only a small electron donation (0.03e/atom) was found for Cr. It also exhibits strong spin-orbit scattering, as judged from quantitative analysis of weak localization effects. As a result, all spin-dependent selection rules are gradually relaxed with increasing Cr concentration, so that the initially observed weak anti-localization shifts towards weak localization. The non-monotonic decrease of conductance as a function of Cr concentration, even at 10K, indicates high diffusivity and activated adsorption into its final optimal adsorption site.
AB - In this investigation we tested the role of Cr impurities on the strongly spin-polarized surface states of ultra-thin epitaxially grown Bi(1 1 1) films by measuring surface magnetoconductance and the Hall effect in conjunction with low-energy electron diffraction at a low temperature (10K). Compared with Fe and Co, investigated recently, Cr atoms turned out to have scattering cross-sections that are about a factor of three higher than the former atoms. Nevertheless, only a small electron donation (0.03e/atom) was found for Cr. It also exhibits strong spin-orbit scattering, as judged from quantitative analysis of weak localization effects. As a result, all spin-dependent selection rules are gradually relaxed with increasing Cr concentration, so that the initially observed weak anti-localization shifts towards weak localization. The non-monotonic decrease of conductance as a function of Cr concentration, even at 10K, indicates high diffusivity and activated adsorption into its final optimal adsorption site.
KW - Bi(1 1 1) films
KW - impurity scattering
KW - surface magnetoconductance
UR - http://www.scopus.com/inward/record.url?scp=84900871480&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/26/22/225002
DO - 10.1088/0953-8984/26/22/225002
M3 - Article
C2 - 24810521
AN - SCOPUS:84900871480
VL - 26
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 22
M1 - 225002
ER -