Details
| Original language | English |
|---|---|
| Pages (from-to) | 10892-10900 |
| Number of pages | 9 |
| Journal | Physical Review B |
| Volume | 39 |
| Issue number | 15 |
| Publication status | Published - 1 Jan 1989 |
| Externally published | Yes |
Abstract
We present magnetoresistance measurements in an AlxGa1-xAs/GaAs heterojunction with a gate covering a small region of the sample. With this device the Landauer approach to the resistance can be directly studied. The two-dimensional electron gas preserved in the nondissipative quantum Hall regime acts as the ideal leads necessary in this approach. The behavior of the scattering region formed by the gated part in between the undisturbed parts (ideal leads) of the sample is investigated by application of different voltages to the gate. We measured the dependence of the device resistance on the gate voltage and the number of available channels within the ideal leads. It is found that a theory based on the classical drift of electrons along equipotential lines (trajectories) accompanied by two types of transitions (intra- and inter-Landau-level transitions) between them is able to explain the main features of experiments.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 39, No. 15, 01.01.1989, p. 10892-10900.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Scattering experiments in two-dimensional systems in the presence of quantizing magnetic fields
AU - Haug, R. J.
AU - Kucera, J.
AU - Streda, P.
AU - Von Klitzing, K.
PY - 1989/1/1
Y1 - 1989/1/1
N2 - We present magnetoresistance measurements in an AlxGa1-xAs/GaAs heterojunction with a gate covering a small region of the sample. With this device the Landauer approach to the resistance can be directly studied. The two-dimensional electron gas preserved in the nondissipative quantum Hall regime acts as the ideal leads necessary in this approach. The behavior of the scattering region formed by the gated part in between the undisturbed parts (ideal leads) of the sample is investigated by application of different voltages to the gate. We measured the dependence of the device resistance on the gate voltage and the number of available channels within the ideal leads. It is found that a theory based on the classical drift of electrons along equipotential lines (trajectories) accompanied by two types of transitions (intra- and inter-Landau-level transitions) between them is able to explain the main features of experiments.
AB - We present magnetoresistance measurements in an AlxGa1-xAs/GaAs heterojunction with a gate covering a small region of the sample. With this device the Landauer approach to the resistance can be directly studied. The two-dimensional electron gas preserved in the nondissipative quantum Hall regime acts as the ideal leads necessary in this approach. The behavior of the scattering region formed by the gated part in between the undisturbed parts (ideal leads) of the sample is investigated by application of different voltages to the gate. We measured the dependence of the device resistance on the gate voltage and the number of available channels within the ideal leads. It is found that a theory based on the classical drift of electrons along equipotential lines (trajectories) accompanied by two types of transitions (intra- and inter-Landau-level transitions) between them is able to explain the main features of experiments.
UR - http://www.scopus.com/inward/record.url?scp=0347954250&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.39.10892
DO - 10.1103/PhysRevB.39.10892
M3 - Article
AN - SCOPUS:0347954250
VL - 39
SP - 10892
EP - 10900
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 15
ER -