Scaling in the metal-insulator transition of the fractional quantum Hall effect

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  • Max Planck Institute for Solid State Research (MPI-FKF)
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Original languageEnglish
Pages (from-to)72-75
Number of pages4
JournalPhysica B: Physics of Condensed Matter
Volume184
Issue number1-4
Publication statusPublished - Feb 1993
Externally publishedYes

Abstract

We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

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Scaling in the metal-insulator transition of the fractional quantum Hall effect. / Koch, S.; Haug, R. J.; von Klitzing, K. et al.
In: Physica B: Physics of Condensed Matter, Vol. 184, No. 1-4, 02.1993, p. 72-75.

Research output: Contribution to journalArticleResearchpeer review

Koch S, Haug RJ, von Klitzing K, Ploog K. Scaling in the metal-insulator transition of the fractional quantum Hall effect. Physica B: Physics of Condensed Matter. 1993 Feb;184(1-4):72-75. doi: 10.1016/0921-4526(93)90323-X
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T1 - Scaling in the metal-insulator transition of the fractional quantum Hall effect

AU - Koch, S.

AU - Haug, R. J.

AU - von Klitzing, K.

AU - Ploog, K.

PY - 1993/2

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N2 - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

AB - We study the magnetoresistance of a high-mobility two-dimensional electron gas at mK temperatures. In particular, the metal-insulator transitions between two adjacent fractional quantum Hall states ( 3 5- 2 3) and between an integral and a fractional quantum Hall plateau ( 2 3-1, 1-4 3 and 5 3-2) are investigated. We obtain a scaling behaviour of the width ΔB of the transition region as a function of the temperature T: ΔB ∝ Tk, for T below a characteristic temperature Tc. Within the experimental error, the exponent κ is the same for all the transitions and is found to be in the range from 0.40 to 0.45. These findings agree with the results of recent theoretical studies. We study the effect of tilted magnetic fields on the scaling behaviour and find a considerable influence of the electronic spin.

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