Details
| Original language | English |
|---|---|
| Article number | 1903717 |
| Pages (from-to) | e1903717 |
| Journal | Advanced materials |
| Volume | 31 |
| Issue number | 39 |
| Publication status | Published - Sept 2019 |
| Externally published | Yes |
Abstract
Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.
Keywords
- cesium lead halide perovskite, distributed feedback lasers, perovskite vertical cavity surface emitting lasers, recrystallization, thermal imprint, thin films
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Advanced materials, Vol. 31, No. 39, 1903717, 09.2019, p. e1903717.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films
AU - Pourdavoud, Neda
AU - Haeger, Tobias
AU - Mayer, Andre
AU - Cegielski, Piotr Jacek
AU - Giesecke, Anna Lena
AU - Heiderhoff, Ralf
AU - Olthof, Selina
AU - Zaefferer, Stefan
AU - Shutsko, Ivan
AU - Henkel, Andreas
AU - Becker-Koch, David
AU - Stein, Markus
AU - Cehovski, Marko
AU - Charfi, Ouacef
AU - Johannes, Hans Hermann
AU - Rogalla, Detlef
AU - Lemme, Max Christian
AU - Koch, Martin
AU - Vaynzof, Yana
AU - Meerholz, Klaus
AU - Kowalsky, Wolfgang
AU - Scheer, Hella Christin
AU - Görrn, Patrick
AU - Riedl, Thomas
N1 - Funding information: The authors acknowledge the German Federal Ministry for Education and Research (Grant No. 13N13819) and the DFG (Deutsche Forschungsgemeinschaft) (Grant No. RI1551/9-1) for financial support. This project received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (Grant Agreement No. 637367). Collaborations of the involved institutions were also funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). Y.V. and D.B.-K. thank the DFG for funding (SFB 1249, Project C04). K.M. and S.O. acknowledge funding within the PeroBOOSt project (EFRE). The authors acknowledge Dr. Stephan Suckow (AMO GmbH) for fruitful discussions and his support.
PY - 2019/9
Y1 - 2019/9
N2 - Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.
AB - Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.
KW - cesium lead halide perovskite
KW - distributed feedback lasers
KW - perovskite vertical cavity surface emitting lasers
KW - recrystallization
KW - thermal imprint
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85070781588&partnerID=8YFLogxK
U2 - 10.1002/adma.201903717
DO - 10.1002/adma.201903717
M3 - Article
C2 - 31402527
AN - SCOPUS:85070781588
VL - 31
SP - e1903717
JO - Advanced materials
JF - Advanced materials
SN - 0935-9648
IS - 39
M1 - 1903717
ER -