Details
| Original language | English |
|---|---|
| Article number | 435204 |
| Journal | NANOTECHNOLOGY |
| Volume | 27 |
| Issue number | 43 |
| Publication status | Published - 23 Sept 2016 |
Abstract
Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.
Keywords
- molicular beam epitaxy, photoluminescence, RSG substrate, strained Ge films, surfactant mediated growth
ASJC Scopus subject areas
- Chemical Engineering(all)
- Bioengineering
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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In: NANOTECHNOLOGY, Vol. 27, No. 43, 435204, 23.09.2016.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films
AU - Katiyar, Ajit K.
AU - Grimm, Andreas
AU - Bar, R.
AU - Schmidt, Jan
AU - Wietler, Tobias
AU - Osten, H. Joerg
AU - Ray, Samit K.
N1 - Funding Information: Authors are grateful to DAAD funded program 'A New Passage to India' for providing financial support to carry out this work.
PY - 2016/9/23
Y1 - 2016/9/23
N2 - Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.
AB - Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.
KW - molicular beam epitaxy
KW - photoluminescence
KW - RSG substrate
KW - strained Ge films
KW - surfactant mediated growth
UR - http://www.scopus.com/inward/record.url?scp=84989166235&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/27/43/435204
DO - 10.1088/0957-4484/27/43/435204
M3 - Article
AN - SCOPUS:84989166235
VL - 27
JO - NANOTECHNOLOGY
JF - NANOTECHNOLOGY
SN - 0957-4484
IS - 43
M1 - 435204
ER -