Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • P. Engelhart
  • N. P. Harder
  • A. Merkle
  • R. Grischke
  • R. Meyer
  • R. Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
View graph of relations

Details

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages900-904
Number of pages5
ISBN (print)1424400163, 9781424400164, 1-4244-0017-1
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, HI, United States
Duration: 7 May 200612 May 2006
Conference number: 4

Abstract

We employ laser technology as a key processing tool for fabricating our novel RISE (Rear Interdigitated Single Evaporation) silicon solar cells. The contactless production sequence incorporates a self-aligning single evaporation step for metallising the interdigitated rear contacts. In this paper, we compare in detail the performance of two types of RISE solar cells with different contact formations to the base: (a) back surface field formation via aluminium doping produced by local laser-firing of the aluminium contact (Al-BSF) and (b) local diffusion of boron (B-BSF). The best solar cell with B-BSF has an AM1.5 efficiency of 21.5 %. The efficiencies of RISE solar cells with Al-BSF are considerably lower due to 5-10% lower short-circuit currents. We ascribe these photocurrent losses to a less-efficient BSF effect of the laser-fired contact compared to a boron-diffused BSF.

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. / Engelhart, P.; Harder, N. P.; Merkle, A. et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 900-904 4059774.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Engelhart, P, Harder, NP, Merkle, A, Grischke, R, Meyer, R & Brendel, R 2006, Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059774, IEEE Computer Society, pp. 900-904, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, HI, United States, 7 May 2006. https://doi.org/10.1109/WCPEC.2006.279601
Engelhart, P., Harder, N. P., Merkle, A., Grischke, R., Meyer, R., & Brendel, R. (2006). Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 900-904). Article 4059774 IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279601
Engelhart P, Harder NP, Merkle A, Grischke R, Meyer R, Brendel R. Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 900-904. 4059774 doi: 10.1109/WCPEC.2006.279601
Engelhart, P. ; Harder, N. P. ; Merkle, A. et al. / Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 900-904
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title = "Rise: 21.5% efficient back junction silicon solar cell with laser technology as a key processing tool",
abstract = "We employ laser technology as a key processing tool for fabricating our novel RISE (Rear Interdigitated Single Evaporation) silicon solar cells. The contactless production sequence incorporates a self-aligning single evaporation step for metallising the interdigitated rear contacts. In this paper, we compare in detail the performance of two types of RISE solar cells with different contact formations to the base: (a) back surface field formation via aluminium doping produced by local laser-firing of the aluminium contact (Al-BSF) and (b) local diffusion of boron (B-BSF). The best solar cell with B-BSF has an AM1.5 efficiency of 21.5 %. The efficiencies of RISE solar cells with Al-BSF are considerably lower due to 5-10% lower short-circuit currents. We ascribe these photocurrent losses to a less-efficient BSF effect of the laser-fired contact compared to a boron-diffused BSF.",
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note = "Funding Information: The financial support by the State of Lower Saxony and the German Federal Government is gratefully acknowledged. The ISFH is a member of the Forschungsverbund Sonnenenergie e.V; 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) ; Conference date: 07-05-2006 Through 12-05-2006",
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