Details
| Original language | English |
|---|---|
| Pages (from-to) | 76-79 |
| Number of pages | 4 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 106 |
| Early online date | 9 Jun 2012 |
| Publication status | Published - Nov 2012 |
Abstract
We present a camera-based technique for the local determination of reverse saturation current densities J 0 of highly doped regions in silicon wafers utilizing photoconductance calibrated photoluminescence imaging (PC-PLI). We apply this approach to 12.5×12.5 cm 2 float zone silicon samples with textured surfaces and a homogeneous phosphorous diffusion with sheet resistances between 24 and 230 Ω/□. We find enhanced photoluminescence emission at metallized regions of a sample due to reflection of long-wavelength light at the rear side of the sample. Our measurement setup comprises an optical short pass filter in front of the camera effectively blocking wavelengths above 970 nm and therefore ensuring a correct calibration of the PL signal in terms of excess charge carrier density Δn. We analyze two sets of samples comprising metal contacts to highly doped regions prepared by Laser Transfer Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J 0 value of 370 fA/cm 2 for the LTD approach compared to a standard diffusion process resulting in J 0=570 fA/cm 2. On the basis of these results we demonstrate that J 0 imaging is a powerful analysis technique for process optimization.
Keywords
- Charge carrier lifetime, Diffusion, Photolumincescence, Reverse saturation current density
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 106, 11.2012, p. 76-79.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Reverse saturation current density imaging of highly doped regions in silicon
T2 - A photoluminescence approach
AU - Müller, Jens
AU - Bothe, Karsten
AU - Herlufsen, Sandra
AU - Hannebauer, Helge
AU - Ferré, Rafel
AU - Brendel, Rolf
PY - 2012/11
Y1 - 2012/11
N2 - We present a camera-based technique for the local determination of reverse saturation current densities J 0 of highly doped regions in silicon wafers utilizing photoconductance calibrated photoluminescence imaging (PC-PLI). We apply this approach to 12.5×12.5 cm 2 float zone silicon samples with textured surfaces and a homogeneous phosphorous diffusion with sheet resistances between 24 and 230 Ω/□. We find enhanced photoluminescence emission at metallized regions of a sample due to reflection of long-wavelength light at the rear side of the sample. Our measurement setup comprises an optical short pass filter in front of the camera effectively blocking wavelengths above 970 nm and therefore ensuring a correct calibration of the PL signal in terms of excess charge carrier density Δn. We analyze two sets of samples comprising metal contacts to highly doped regions prepared by Laser Transfer Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J 0 value of 370 fA/cm 2 for the LTD approach compared to a standard diffusion process resulting in J 0=570 fA/cm 2. On the basis of these results we demonstrate that J 0 imaging is a powerful analysis technique for process optimization.
AB - We present a camera-based technique for the local determination of reverse saturation current densities J 0 of highly doped regions in silicon wafers utilizing photoconductance calibrated photoluminescence imaging (PC-PLI). We apply this approach to 12.5×12.5 cm 2 float zone silicon samples with textured surfaces and a homogeneous phosphorous diffusion with sheet resistances between 24 and 230 Ω/□. We find enhanced photoluminescence emission at metallized regions of a sample due to reflection of long-wavelength light at the rear side of the sample. Our measurement setup comprises an optical short pass filter in front of the camera effectively blocking wavelengths above 970 nm and therefore ensuring a correct calibration of the PL signal in terms of excess charge carrier density Δn. We analyze two sets of samples comprising metal contacts to highly doped regions prepared by Laser Transfer Doping (LTD) as well as standard tube furnace phosphorus diffusion. We find a considerably smaller J 0 value of 370 fA/cm 2 for the LTD approach compared to a standard diffusion process resulting in J 0=570 fA/cm 2. On the basis of these results we demonstrate that J 0 imaging is a powerful analysis technique for process optimization.
KW - Charge carrier lifetime
KW - Diffusion
KW - Photolumincescence
KW - Reverse saturation current density
UR - http://www.scopus.com/inward/record.url?scp=84865497455&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2012.05.026
DO - 10.1016/j.solmat.2012.05.026
M3 - Article
AN - SCOPUS:84865497455
VL - 106
SP - 76
EP - 79
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -